Simulations of immersion lithography

Min Bai; Junjiang Lei; Lin Zhang; James P. Shiely

doi:10.1117/12.601497

12 May 2005 Simulations of immersion lithography

Min Bai, Junjiang Lei, Lin Zhang, James P. Shiely

Proceedings Volume 5754, Optical Microlithography XVIII; (2005) https://doi.org/10.1117/12.601497
Event: Microlithography 2005, 2005, San Jose, California, United States

Abstract

Immersion lithography has been regarded as the most viable contender to extend the resolution capability of optical lithography using 193nm wavelength. In parallel with the tremendous effort of overcoming the engineering challenges in immersion, support from modeling and simulations is strongly needed. Although immersion simulation has become available through a number of simulation tools, we need to investigate the model generation and its compatibility within the context of full-chip optical proximity correction (OPC). In this paper, we will describe the physics of a full vector model that is necessary for the high NA optical modeling under immersion. In this full vector model, we consider not only the plane wave decomposition as light travels from the mask to wafer plane, but also the refraction, transmission and reflection of light through a thin film stack on the wafer. We integrated this comprehensive vector model into Synopsys OPC modeling tool ProGen. Through ProGen simulation results, we will discuss several important merits of immersion lithography, as well as the full portability of immersion models into OPC process flow.

Citation Download Citation

Min Bai, Junjiang Lei, Lin Zhang, and James P. Shiely "Simulations of immersion lithography", Proc. SPIE 5754, Optical Microlithography XVIII, (12 May 2005); https://doi.org/10.1117/12.601497

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