Real-time electron counting in semiconductor nanostructures

A. J. Rimberg; M. Thalakulam; W. Lu; Z. Ji; L. N. Pfeiffer; K. W. West

doi:10.1117/12.603651

18 May 2005 Real-time electron counting in semiconductor nanostructures

A. J. Rimberg, M. Thalakulam, W. Lu, Z. Ji, L. N. Pfeiffer, K. W. West

Proceedings Volume 5790, Terahertz for Military and Security Applications III; (2005) https://doi.org/10.1117/12.603651
Event: Defense and Security, 2005, Orlando, Florida, United States

Abstract

By coupling a radio-frequency single-electron transistor (RF-SET) to a quantum dot (QD) in a GaAs/AlGaAs heterostructure, we have succeeded in detecting the tunneling of individual electrons on and off the QD on time scales as short as one microsecond. Using charge detection to probe the state of the QD allows us to nearly isolate the dot from its leads, thereby minimizing decoherence-inducing effects of the environment. We have extended these charge detection techniques to double quantum dots (DQDs) that can simultaneously be used to characterize the backaction of the RF-SET. The combined RF-SET/DQD system is well-suited to the development of charge- or spin-based quantum bits, and to investigation of the quantum measurement problem.

Citation Download Citation

A. J. Rimberg, M. Thalakulam, W. Lu, Z. Ji, L. N. Pfeiffer, and K. W. West "Real-time electron counting in semiconductor nanostructures", Proc. SPIE 5790, Terahertz for Military and Security Applications III, (18 May 2005); https://doi.org/10.1117/12.603651

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