Annealing dynamics of As ion-implanted GaAs: As<sub>Ga</sub> antisite defect model

Ryuzi Yano; Hiroyuki Shinojima

doi:10.1117/12.647725

6 December 2005 Annealing dynamics of As ion-implanted GaAs: As_Ga antisite defect model

Ryuzi Yano, Hiroyuki Shinojima

Proceedings Volume 6050, Optomechatronic Micro/Nano Devices and Components; 605011 (2005) https://doi.org/10.1117/12.647725
Event: Optomechatronic Technologies 2005, 2005, Sapporo, Japan

Abstract

We determined the annealing dynamics of As_Ga antisite defects in As ion-implanted GaAs based on a model where As_Ga antisite defects trap photo-excited carriers. An Arrhenius plot of the carrier decay rate vs. annealing temperature in the high temperature regime gave an energy E_PA, which was different from true activation energy. The annealing time dependence of E_PA obtained by the two diffusion models (self diffusion and V_Ga vacancy assisted diffusion of defects) were compared with E_PA's obtained form already published works, which proved that the density of V_Ga vacancy was high enough to assist the diffusion of As_Ga antisite defects and that the annealing dynamics of As_Ga antisite defects was V_Ga vacancy assisted diffusion.

Citation Download Citation

Ryuzi Yano and Hiroyuki Shinojima "Annealing dynamics of As ion-implanted GaAs: As_Ga antisite defect model", Proc. SPIE 6050, Optomechatronic Micro/Nano Devices and Components, 605011 (6 December 2005); https://doi.org/10.1117/12.647725

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