Coherent transport of hole and Coulomb blockade phenomenon in long p-type semiconductor carbon nanotube

Takafumi Kamimura; Kazuhiko Matsumoto

doi:10.1117/12.663344

28 February 2006 Coherent transport of hole and Coulomb blockade phenomenon in long p-type semiconductor carbon nanotube

Takafumi Kamimura, Kazuhiko Matsumoto

Author Affiliations +

Proceedings Volume 6127, Quantum Sensing and Nanophotonic Devices III; 612714 (2006) https://doi.org/10.1117/12.663344
Event: Integrated Optoelectronic Devices 2006, 2006, San Jose, California, United States

Abstract

We have succeeded in observing the coexistence of the Coulomb charging effect and the coherent transport of the hole in a single-walled carbon nanotube (SWNT) with a length of 4.5 μm at 8.6 K. SWNT channel field-effect transistor (FET) structures were prepared with two different channel lengths of 4.5 and 1.4 μm. The samples showed p-type semiconductor characteristics under large gate and drain biases at 8.6 K. At 8.6 K, on the other hand, single-hole transistor characteristics with different Coulomb charging energies corresponding to the length of the channel were observed in each sample. Drain current peaks with different periods corresponding to the length of the channel were also observed outside of the Coulomb blockade area for the higher drain voltages in each sample. The drain current peaks are attributed to resonant tunneling of the hole through the separation of the quantum energy levels originating from coherent transport of the hole in the entire semiconductive SWNT.

Citation Download Citation

Takafumi Kamimura and Kazuhiko Matsumoto "Coherent transport of hole and Coulomb blockade phenomenon in long p-type semiconductor carbon nanotube", Proc. SPIE 6127, Quantum Sensing and Nanophotonic Devices III, 612714 (28 February 2006); https://doi.org/10.1117/12.663344

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