High power AlInGaN-based blue-violet laser diodes

O. H. Nam; K. H. Ha; H. Y. Ryu; S. N. Lee; T. H. Chang; K. K. Choi; J. K. Son; J. H. Chae; S. H. Chae; H. S. Paek; Y. J. Sung; T. Sakong; H. G. Kim; H. S. Kim; Y. H. Kim; Y. J. Park

doi:10.1117/12.645579

22 February 2006 High power AlInGaN-based blue-violet laser diodes

O. H. Nam, K. H. Ha, H. Y. Ryu, S. N. Lee, T. H. Chang, K. K. Choi, J. K. Son, J. H. Chae, S. H. Chae, H. S. Paek, Y. J. Sung, T. Sakong, H. G. Kim, H. S. Kim, Y. H. Kim, Y. J. Park

Author Affiliations +

Proceedings Volume 6133, Novel In-Plane Semiconductor Lasers V; 61330N (2006) https://doi.org/10.1117/12.645579
Event: Integrated Optoelectronic Devices 2006, 2006, San Jose, California, United States

Abstract

High power and high efficiency AlInGaN-based laser diodes with 405 nm were fabricated for the post-DVD applications. Magnesium doped AlGaN/GaN multiple quantum barrier (MQB) layers were introduced into the laser diode structure, which resulted in considerable improvement in lasing performances such as threshold current and slope efficiency. Asymmetric waveguide structure was used in order to improve the characteristics of laser diodes. Aluminum content in the n-cladding layer was varied in connection with the vertical beam divergence angle and COD level. By decreasing Al content in the n-cladding layer, the vertical divergence angle was reduced to 17 degree and the COD level was enhanced to over 300mW. The maximum output power reached as high as 470 mW, the highest value ever reported for the narrow-stripe GaN LDs. In addition, the fundamental transverse-mode operation was clearly demonstrated up to 500 mW-pulsed output power.

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O. H. Nam, K. H. Ha, H. Y. Ryu, S. N. Lee, T. H. Chang, K. K. Choi, J. K. Son, J. H. Chae, S. H. Chae, H. S. Paek, Y. J. Sung, T. Sakong, H. G. Kim, H. S. Kim, Y. H. Kim, and Y. J. Park "High power AlInGaN-based blue-violet laser diodes", Proc. SPIE 6133, Novel In-Plane Semiconductor Lasers V, 61330N (22 February 2006); https://doi.org/10.1117/12.645579

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