Investigation of optical far-field stability in long-wavelength VCSELs: thermal and carrier-induced effects

Alexandra Bäcker; Rafael Santschi; Stefan Odermatt; Friedhard Römer; Michael Pfeiffer; Paul Royo; Vladimir Iakovlev; Alexei Syrbu; Andrei Caliman; Alexandru Mereuta; Eli Kapon; Bernd Witzigmann

doi:10.1117/12.699842

7 February 2007 Investigation of optical far-field stability in long-wavelength VCSELs: thermal and carrier-induced effects

Alexandra Bäcker, Rafael Santschi, Stefan Odermatt, Friedhard Römer, Michael Pfeiffer, Paul Royo, Vladimir Iakovlev, Alexei Syrbu, Andrei Caliman, Alexandru Mereuta, Eli Kapon, Bernd Witzigmann

Author Affiliations +

Proceedings Volume 6468, Physics and Simulation of Optoelectronic Devices XV; 64680H (2007) https://doi.org/10.1117/12.699842
Event: Integrated Optoelectronic Devices 2007, 2007, San Jose, California, United States

Abstract

A stable far-field and single-mode performance is of great interest for many applications in sensing or communications. In this contribution an analysis of the far-field stability versus current and temperature is performed for a long-wavelength vertical-cavity surface-emitting laser (VCSEL) emitting around 1310 nm. Furthermore, the single-mode stability is investigated by means of a technology computer aided design (TCAD) tool. The electro-opto-thermal multi-dimensional simulations are fully-coupled and use microscopic models. The optical modes are obtained by solving the vectorial Helmholtz equation, using a finite element approach. The impact of temperature, free carrier absorption and gain on the refractive index is accounted for. The far-field is calculated using Green's functions. The investigated VCSEL features an InP-based cavity with multiple quantum wells and a tunnel junction as well as wafer-fused AlGaAs/GaAs distributed Bragg reflectors. The comparison of simulated and measured L-I, V-I characteristics and far-field as well as the wavelength-shift show good agreement for different ambient temperatures as well as driving current values. The simulations reveal the impact of temperature, gain and carrier effects on the far-field. The design of optical guiding structures (such as oxides or tunnel junctions) and its impact on the far-field behaviour over ambient temperature and bias current is discussed.

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Alexandra Bäcker, Rafael Santschi, Stefan Odermatt, Friedhard Römer, Michael Pfeiffer, Paul Royo, Vladimir Iakovlev, Alexei Syrbu, Andrei Caliman, Alexandru Mereuta, Eli Kapon, and Bernd Witzigmann "Investigation of optical far-field stability in long-wavelength VCSELs: thermal and carrier-induced effects", Proc. SPIE 6468, Physics and Simulation of Optoelectronic Devices XV, 64680H (7 February 2007); https://doi.org/10.1117/12.699842

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