Paper
27 March 2007 Sources and scaling laws for LER and LWR
Author Affiliations +
Abstract
LER (line edge roughness) is becoming increasingly critical for manufacturers and efforts to understand and control it have given disappointing results. We propose that LER is due to a combination of coherent optical effects, mask LER, and chemical processes during exposure, PEB (post exposure bake) and development. Different sources of LER have similar scaling laws and PSD (Power spectral density) distribution, and the causes of LER are easily misidentified. High sensitivity, thin resist, and low image log-slope generally give more LER. No single-effect model is going to be adequate to give quantitative predictive guidance how to reduce LER. Since LER is shared between chemistry, optics and metrology, a cross-disciplinary model is needed. We propose such an LER budget model with a unified analysis of the metrology and consequences of LER, but with models for source effects plugged in by experts from the relevant domains.
© (2007) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Tor Sandstrom and Christer Rydberg "Sources and scaling laws for LER and LWR", Proc. SPIE 6520, Optical Microlithography XX, 65200X (27 March 2007); https://doi.org/10.1117/12.712248
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Cited by 2 scholarly publications.
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KEYWORDS
Line edge roughness

Speckle

Metrology

Line width roughness

Fiber optic illuminators

Molecules

Optical filters

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