Main sources of electron mobility fluctuations in semiconductors

Slavik V. Melkonyan; Ferdinand V. Gasparyan; Haik V. Asriyan

doi:10.1117/12.724567

11 June 2007 Main sources of electron mobility fluctuations in semiconductors

Slavik V. Melkonyan, Ferdinand V. Gasparyan, Haik V. Asriyan

Proceedings Volume 6600, Noise and Fluctuations in Circuits, Devices, and Materials; 66001K (2007) https://doi.org/10.1117/12.724567
Event: SPIE Fourth International Symposium on Fluctuations and Noise, 2007, Florence, Italy

Abstract

The main mechanisms of the conduction electrons mobility fluctuations, originating in n-type semiconductors with electron traps are investigated. It is shown that the current carriers mobility fluctuations are determined by the energy fluctuations. Fundamental sources of electron mobility fluctuations are established. The first source is established to be related with a non-elasticity of electron random scattering processes: intraband scatterings and electronic transitions "trap-conduction band". The second source of mobility fluctuations is established to be related with random character of the transitions of conductance electrons trough the potential barriers of p-n junctions or/and ohmic contacts.

Citation Download Citation

Slavik V. Melkonyan, Ferdinand V. Gasparyan, and Haik V. Asriyan "Main sources of electron mobility fluctuations in semiconductors", Proc. SPIE 6600, Noise and Fluctuations in Circuits, Devices, and Materials, 66001K (11 June 2007); https://doi.org/10.1117/12.724567

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