Paper
25 November 1986 Laser-Assisted Chemical And Morphological Modification Of Metallic Substrates
Julian P Partridge, Peter R Strutt
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Proceedings Volume 0669, Laser Applications in Chemistry; (1986) https://doi.org/10.1117/12.938951
Event: 1986 Quebec Symposium, 1986, Quebec City, Canada
Abstract
The synthesis of silicon nitride surface layers on metal substrates by laser-activated deposition of organometallic precursors has been demonstrated. Advantages of this technique include high deposition rates, constancy of composition, and avoidance of toxic or pyrophor ic reactants. The uniform morphology surface layers of up to 20μm thickness contained 2000 Å diameter particles of amorphous silicon nitride. Auger electron spectroscopy and Fourier transform infrared reflection spectroscopy revealed there to be oxygen contamination at the surface. Attainment of a uniform morphology required a specific set of processing conditions. The presence of residual Si-CH3 bonds within the layers was shown to be reduced by subsequent laser heating. Suggestions are made for obtaining Si3N4 layers of improved purity, also for extending this approach by using a variety of organometallic precursors to obtain SiC and Si02 layers.
© (1986) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Julian P Partridge and Peter R Strutt "Laser-Assisted Chemical And Morphological Modification Of Metallic Substrates", Proc. SPIE 0669, Laser Applications in Chemistry, (25 November 1986); https://doi.org/10.1117/12.938951
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Cited by 4 scholarly publications and 3 patents.
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KEYWORDS
Silicon

Absorption

Chemical vapor deposition

Oxygen

Nickel

Particles

Silicon carbide

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