Paper
29 January 2008 Characterization of AlInGaN-based 405nm distributed feedback laser diodes
S. Masui, K. Tsukayama, T. Yanamoto, T. Kozaki, S. Nagahama, T. Mukai
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Abstract
The first-order AlInGaN 405 nm distributed feed-back (DFB) laser diodes were grown on the low dislocation freestanding GaN substrates by a metal organic chemical vapor deposition method. The first-order diffractive grating whose period was 80 nm was formed into an n-type cladding layer. The fine tooth shape grating was obtained by the EB lithography and the dry etching. No additional threading dislocation could be found at the regrowth interface. As a result, we succeeded in demonstrating the first-order AlInGaN based 405 nm DFB laser diodes under cw operation. The threshold current and the slope efficiency were 22 mA and 1.44 W/A under continuous wave operation at 25 °C, respectively. The single longitudinal mode emission was maintained up to an output power of 60 mW. The fundamental transverse mode operation with a single longitudinal mode was observed in the temperature range from 15 °C to 85 °C at an output power of 30 mW. The lifetime was estimated to be 4000 h by the lifetime test which was carried out under the condition of a constant output power of 30mW at 25 °C for 1000 h. The single longitudinal mode emission was maintained for the life tested DFB laser diodes.
© (2008) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
S. Masui, K. Tsukayama, T. Yanamoto, T. Kozaki, S. Nagahama, and T. Mukai "Characterization of AlInGaN-based 405nm distributed feedback laser diodes", Proc. SPIE 6909, Novel In-Plane Semiconductor Lasers VII, 69090G (29 January 2008); https://doi.org/10.1117/12.767731
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Cited by 2 scholarly publications.
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KEYWORDS
Continuous wave operation

Semiconductor lasers

Coating

Temperature metrology

Gallium nitride

Distributed feedback laser diodes

Dry etching

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