Wafer warp caused by thick film resists acting as a permanent part of the device

R. Leuschner; M. Franosch; T. Dow

doi:10.1117/12.772530

26 March 2008 Wafer warp caused by thick film resists acting as a permanent part of the device

R. Leuschner, M. Franosch, T. Dow

Proceedings Volume 6923, Advances in Resist Materials and Processing Technology XXV; 69233N (2008) https://doi.org/10.1117/12.772530
Event: SPIE Advanced Lithography, 2008, San Jose, California, United States

Abstract

Epoxy-novolak thick film resists are of interest for applications where the resist pattern remains in the device serving as mechanical alignment aids, micro channels or protection layers. For these applications, good mechanical properties are of interest. Unfortunately mechanical strength comes with high cross-linking density and, therefore, high tensile stress. We report here on a comparison of three commercially available thick film resists with respect to the following criteria: thickness and uniformity on high topography wafers, i-line photo speed, adhesion on Si₃N₄, hardness and plasticity, glass transition temperature and wafer warp. The three resists (2 types of SU-8 [MicroChem Corp.] and one type of TMMR [Tokyo Ohka Co., LTD]) show different behavior as a result of the different solvent, photo-acid-generator (PAG) and polymer properties, and trade-offs have to be made depending on the applications.

Citation Download Citation

R. Leuschner, M. Franosch, and T. Dow "Wafer warp caused by thick film resists acting as a permanent part of the device", Proc. SPIE 6923, Advances in Resist Materials and Processing Technology XXV, 69233N (26 March 2008); https://doi.org/10.1117/12.772530

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