MOS capacitance properties of silicon-based PZT thin films

Xiuhua Zhang; Meirong Shi; Sumei Qin; Ming Guo; Hongmei Deng; Pingxiong Yang

doi:10.1117/12.792634

11 March 2008 MOS capacitance properties of silicon-based PZT thin films

Xiuhua Zhang, Meirong Shi, Sumei Qin, Ming Guo, Hongmei Deng, Pingxiong Yang

Proceedings Volume 6984, Sixth International Conference on Thin Film Physics and Applications; 69841O (2008) https://doi.org/10.1117/12.792634
Event: Sixth International Conference on Thin Film Physics and Applications, 2007, Shanghai, China

Abstract

Ferroelectric Pb(Zr_0.53Ti_0.47)O₃ (PZT) thin films were grown on silicon substrates by modified So1-Gel method using C₄H₆O₄Pb•3H₂O, ZrO(NO₃)₂•2H₂O and Ti(OC₄H₉) as raw materials. PbTiO₃ (PT) thin film was introduced as buffer layer. The microstructures of PZT thin films were characterized by XRD and SEM. Electrical properties such as C-V and leakage current characteristics of the films was investigated. The results show that PT buffer layer was helpful to improve the dielectric and ferroelectric properties of PZT thin films. PT buffer layer prevented the interface reaction and reduced the leakage current density of PZT/PT/Si structure about 10^-2 compared with that of PZT/Si structure.

Citation Download Citation

Xiuhua Zhang, Meirong Shi, Sumei Qin, Ming Guo, Hongmei Deng, and Pingxiong Yang "MOS capacitance properties of silicon-based PZT thin films", Proc. SPIE 6984, Sixth International Conference on Thin Film Physics and Applications, 69841O (11 March 2008); https://doi.org/10.1117/12.792634

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