Novolak Design For High Resolution Positive Photoresists

M. Hanabata; A. Furuta; Y. Uemura

doi:10.1117/12.940312

25 August 1987 Novolak Design For High Resolution Positive Photoresists

M. Hanabata, A. Furuta, Y. Uemura

Proceedings Volume 0771, Advances in Resist Technology and Processing IV; (1987) https://doi.org/10.1117/12.940312
Event: Microlithography Conferences, 1987, Santa Clara, CA, United States

Abstract

The mechanism of resolution improvement in novolak-based positive photoresists was investigated from the stand-point of the image formation process. The image formation process in the novolak-quinonediazide system involves the dissolution inhibition in unexposed parts and the dissolution promotion in exposed parts. The 4-(gamma)-value, which is one of the indexes of resolution capabilities, depends greatly on the difference between the solubility of unexposed parts and that of exposed parts, i.e.-the lower dissolution rate in unexposed parts(Ro) and the higher one in exposed parts(Rp) are desirable to obtain high γvalues.

Citation Download Citation

M. Hanabata, A. Furuta, and Y. Uemura "Novolak Design For High Resolution Positive Photoresists", Proc. SPIE 0771, Advances in Resist Technology and Processing IV, (25 August 1987); https://doi.org/10.1117/12.940312

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