MWIR InAsSb XB[sub]n[/sub]n detector (bariode) arrays operating at 150K

Philip Klipstein; Olga Klin; Steve Grossman; Noam Snapi; Inna Lukomsky; Maya Brumer; Michael Yassen; Daniel Aronov; Eyal Berkowitz; Alexander Glozman; Tal Fishman; Osnat Magen; Itay Shtrichman; Eliezer Weiss

doi:10.1117/12.883238

20 May 2011 MWIR InAsSb XB_nn detector (bariode) arrays operating at 150K

Philip Klipstein, Olga Klin, Steve Grossman, Noam Snapi, Inna Lukomsky, Maya Brumer, Michael Yassen, Daniel Aronov, Eyal Berkowitz, Alexander Glozman, Tal Fishman, Osnat Magen, Itay Shtrichman, Eliezer Weiss

Author Affiliations +

Proceedings Volume 8012, Infrared Technology and Applications XXXVII; 80122R (2011) https://doi.org/10.1117/12.883238
Event: SPIE Defense, Security, and Sensing, 2011, Orlando, Florida, United States

Abstract

The XB_nn high operating temperature (HOT) detector project at SCD is aimed at developing a HOT (~150K) mid-wave infrared (MWIR) detector array, based on InAsSb/AlSbAs barrier detector or "bariode" device elements. The essential principle of the XB_nn bariode architecture is to suppress the Generation-Recombination contribution to the dark current by ensuring that the depletion region of the device is contained inside a large bandgap n-type barrier layer (BL) and excluded from the narrow bandgap n-type active layer (AL). The band profile of the XB_nn device leads to effective blocking of electron transport across the BL while maintaining a free path for the holes, thus assuring a high internal quantum efficiency (QE). Our devices exhibit a very large minority carrier lifetime (~700 ns), leading to a very low dark current of <10^-6 A cm^-2 at 150K, which is essentially diffusion limited. We compare bariode devices with both a p-type GaSb contact layer (CL) and an n-type InAsSb CL (termed C_pB_nn and nB_nn, respectively). Apart from a ~0.3V shift in the operating bias, the optical and electrical properties of both architectures are virtually identical, demonstrating the generic nature of the XB_nn barrier detector family. We have fabricated FPAs from nB_nn bariode arrays bonded both to a 320×256, 30 μm pitch Read-Out Integrated Circuit (ROIC) and a 640×512, 15 μm pitch ROIC. For lattice matched FPAs the cut-off wavelength at >50% of maximum response is ~ 4.1 μm. We show an image registered at 150K with a 640×512/15 μm Pelican FPA, using f/3.2 optics. The operability at 150K is >99.5% and the measured NETD, limited only by shot and Read-Out noise, is 20 mK for a 22 ms integration time. At this f/number, the detector has a background limited performance (BLIP) up to ~165K.

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Philip Klipstein, Olga Klin, Steve Grossman, Noam Snapi, Inna Lukomsky, Maya Brumer, Michael Yassen, Daniel Aronov, Eyal Berkowitz, Alexander Glozman, Tal Fishman, Osnat Magen, Itay Shtrichman, and Eliezer Weiss "MWIR InAsSb XB_nn detector (bariode) arrays operating at 150K", Proc. SPIE 8012, Infrared Technology and Applications XXXVII, 80122R (20 May 2011); https://doi.org/10.1117/12.883238

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