Paper
28 January 2013 Low-dropout regulator with modest ripple and rugged performance in 180nm
Sreehari Rao Patri, Krishnaprasad K. S. R., Suresh Alapati, Rajeshwar Rao
Author Affiliations +
Proceedings Volume 8760, International Conference on Communication and Electronics System Design; 87601J (2013) https://doi.org/10.1117/12.2012306
Event: International Conference on Communication and Electronics System Design, 2013, Jaipur, India
Abstract
Low-dropout (LDO) regulator with modest ripple and improved transient response is implemented in 0.18μm CMOS technology. The proposed regulator for SOC application can achieve high stability for load current from zero to 100mA. This LDO uses process, temperature independent biasing for error amplifier which makes LDO temperature and process independent. The experimental results show the load regulation of 162 μV/mA and line regulation of 0.9 mV/V. The whole LDO chip consumes a quiescent current of 50 μA with an ultra low dropout voltage of 200mV at the maximum output current of 100mA.
© (2013) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Sreehari Rao Patri, Krishnaprasad K. S. R., Suresh Alapati, and Rajeshwar Rao "Low-dropout regulator with modest ripple and rugged performance in 180nm", Proc. SPIE 8760, International Conference on Communication and Electronics System Design, 87601J (28 January 2013); https://doi.org/10.1117/12.2012306
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KEYWORDS
Transistors

System on a chip

Amplifiers

CMOS technology

Feedback loops

Neodymium

Signal processing

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