Crystallization behavior of Ge2Te3-TiO2 film for phase-change random access memory application

Yegang Lu; Sannian Song; Zhitang Song; Yan Cheng; Liangcai Wu; Bo Liu

doi:10.1117/12.2018637

24 January 2013 Crystallization behavior of Ge2Te3-TiO2 film for phase-change random access memory application

Yegang Lu, Sannian Song, Zhitang Song, Yan Cheng, Liangcai Wu, Bo Liu

Proceedings Volume 8782, 2012 International Workshop on Information Storage and Ninth International Symposium on Optical Storage; 87820K (2013) https://doi.org/10.1117/12.2018637
Event: 2012 International Workshop on Information Data Storage and Ninth International Symposium on Optical Storage, 2012, Shanghai, China

Abstract

Crystallization behavior of the Ge₂Te₃-TiO₂ films prepared by the co-sputtering using Ge₂Te₃ and TiO₂ targets was investigated by in situ resistance-temperature measurement and transmission electron microscopy. The crystallization kinetic parameters including rate factor and kinetics exponent were obtained by the non-isothermal change in resistance using Kissinger’s plot and Ozawa’s method. The average kinetics exponent was estimated by the nonisothermal change in resistance. Compared with other studied compositions, the composition with TiO2 concentration of 5 at.% exhibited shorter crystallization time which was calculated by the Johnson-Mehl-Avrami equation. The crystallization behavior of Ge₂Te₃-TiO₂ film was verified by the transition electron microscopy at different annealing temperature. With the short crystallization time and high crystallization temperature, the compositions with TiO2 concentration of 5-15 at.% may be one of the competing candidates for phase change memory application.

Citation Download Citation

Yegang Lu, Sannian Song, Zhitang Song, Yan Cheng, Liangcai Wu, and Bo Liu "Crystallization behavior of Ge2Te3-TiO2 film for phase-change random access memory application", Proc. SPIE 8782, 2012 International Workshop on Information Storage and Ninth International Symposium on Optical Storage, 87820K (24 January 2013); https://doi.org/10.1117/12.2018637

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