Paper
7 December 2013 Cryogenic optical profilometry for the calculation of coefficient of thermal expansion in thin films
Author Affiliations +
Proceedings Volume 8923, Micro/Nano Materials, Devices, and Systems; 89231V (2013) https://doi.org/10.1117/12.2033802
Event: SPIE Micro+Nano Materials, Devices, and Applications, 2013, Melbourne, Victoria, Australia
Abstract
This work focuses on the development of a cryogenic optical profilometry system for the measurement of material properties of thin films across a wide temperature range. A cryostat was machined and integrated with a Zygo NewView 600K optical profilometer and vacuum system. Curvature data were taken for a SiNx thin film on a GaAs substrate from 300 K down to 80 K. From the curvature data, the coefficient of thermal expansion was calculated. The cryogenic optical profilometry system was benchmarked with a three beam curvature technique, and demonstrated excellent agreement across the full temperature range from 300 K to 80 K
© (2013) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Kirsten L. Brookshire, Ramin Rafiei, Mariusz Martyniuk, K. K. M. B. Dilusha Silva, John Bumgarner, Robert W. Basedow, Yinong Liu, and Lorenzo Faraone "Cryogenic optical profilometry for the calculation of coefficient of thermal expansion in thin films", Proc. SPIE 8923, Micro/Nano Materials, Devices, and Systems, 89231V (7 December 2013); https://doi.org/10.1117/12.2033802
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KEYWORDS
Thin films

Gallium arsenide

Plasma enhanced chemical vapor deposition

Temperature metrology

Cryogenics

Diodes

Silicon

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