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5 March 2022 Hetroepitaxy of III-nitrides on polycrystalline and amorphous substrates
Muzafar Rather, Loganathan Ravi, Shih-Ming He, Chao-Chia Cheng, Ching-Yuan Su, Jen-Inn Chyi
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Proceedings Volume PC12001, Gallium Nitride Materials and Devices XVII; PC1200108 (2022) https://doi.org/10.1117/12.2608062
Event: SPIE OPTO, 2022, San Francisco, California, United States
Abstract
III-nitride semiconductors, GaN, in particular, had played an important role in optoelectronic and electronic devices through the advancement of heteroepitaxy. These heteroepitaxy processes have been well established on single-crystalline substrates, such as Si, SiC, and sapphire. However, the mismatch between GaN and these substrates in lattice constant as well as thermal expansion coefficient imposes the limit on device performance and reliability. The search for a better substrate still continues. Here, we report the heteroepitaxy of III-nitride semiconductors on polycrystalline and amorphous substrates using a layered two-dimensional material as a buffer and seed layer. The two-dimensional material on a polycrystalline or amorphous substrate mitigates the lattice mismatch conditions, and shields the random oriented atomic registry of polycrystalline or amorphous substrates to promote single-crystalline hetroepitaxy of III-nitrides without any requisites from the substrate itself.
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Muzafar Rather, Loganathan Ravi, Shih-Ming He, Chao-Chia Cheng, Ching-Yuan Su, and Jen-Inn Chyi "Hetroepitaxy of III-nitrides on polycrystalline and amorphous substrates", Proc. SPIE PC12001, Gallium Nitride Materials and Devices XVII, PC1200108 (5 March 2022); https://doi.org/10.1117/12.2608062
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KEYWORDS
Heteroepitaxy
Gallium nitride
Semiconductors
Silicon
Silicon carbide
Patterned sapphire substrate
Reliability
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