Strain states and relaxation for α-(AlxGa1-x)2O3 thin films grown by combinatorial pulsed laser deposition on prismatic planes of α-Al2O3 in the full composition range

Max Kneiss; Daniel Splith; Holger von Wenckstern; Michael Lorenz; Thorsten Schultz; Norbert Koch; Marius Grundmann

doi:10.1117/12.2623452

5 March 2022 Strain states and relaxation for α-(Al_xGa_1-x)₂O₃ thin films grown by combinatorial pulsed laser deposition on prismatic planes of α-Al₂O₃ in the full composition range

Max Kneiss, Daniel Splith, Holger von Wenckstern, Michael Lorenz, Thorsten Schultz, Norbert Koch, Marius Grundmann

Author Affiliations +

Proceedings Volume PC12002, Oxide-based Materials and Devices XIII; PC1200214 (2022) https://doi.org/10.1117/12.2623452
Event: SPIE OPTO, 2022, San Francisco, California, United States

Conference Poster

Abstract

We investigate α-(Al_xGa_1-x)₂O₃layers deposited by PLD for 0≤x≤1 on a- and m-plane sapphire. RSM measurements reveal a fundamental difference for these planes. Pseudomorphic α-(Al_xGa_1-x)₂O₃ on m-plane sapphire shows a shear strain e'5 along the c-axis vanishing on a-plane sapphire. Similarly, only relaxed m-plane α-(Al_xGa_1-x)₂O₃ exhibits a global lattice tilt in c-axis direction. Modeling of lattice constants and e'5 as function of x prove the shear strain to be due to the non-vanishing C14 component of the stress-strain tensor for α-(Al_xGa_1-x)₂O₃contributing only for the m-plane. We further explain the occurrence of the lattice tilt and identify possible relaxation mechanisms.

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Max Kneiss, Daniel Splith, Holger von Wenckstern, Michael Lorenz, Thorsten Schultz, Norbert Koch, and Marius Grundmann "Strain states and relaxation for α-(Al_xGa_1-x)₂O₃ thin films grown by combinatorial pulsed laser deposition on prismatic planes of α-Al₂O₃ in the full composition range", Proc. SPIE PC12002, Oxide-based Materials and Devices XIII, PC1200214 (5 March 2022); https://doi.org/10.1117/12.2623452

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