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5 March 2022 GaN-based external-cavity diode lasers for strontium ion cooling
John Macarthur, Jack Thomas, Loyd McKnight, Shaun Jones, William Dorward, Stephen P. Najda, P. Perlin, T. Suski, S. Stanczyk, M. Leszczynski, D. Schiavon
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Proceedings Volume PC12009, Quantum Sensing and Nano Electronics and Photonics XVIII; PC120090O (2022) https://doi.org/10.1117/12.2608534
Event: SPIE OPTO, 2022, San Francisco, California, United States
Abstract
Miniaturisation of laser sources is crucial to the translation of quantum technologies from the laboratory to the real world. Typically, the lasers required for cooling and trapping of atoms and ions make up a significant footprint of the measurement system. Increasing robustness and reliability whilst removing noise sources is a key challenge whilst reducing volume. Direct generation GaN based external cavity diode lasers offer lower SWaP-C compared to traditional frequency doubled alternatives. Butterfly packaged single frequency sources operation in the blue - UV allow numerous atomic transitions including Sr, Sr+, Yt, Yb+, Mg and Ca to be targeted.
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John Macarthur, Jack Thomas, Loyd McKnight, Shaun Jones, William Dorward, Stephen P. Najda, P. Perlin, T. Suski, S. Stanczyk, M. Leszczynski, and D. Schiavon "GaN-based external-cavity diode lasers for strontium ion cooling", Proc. SPIE PC12009, Quantum Sensing and Nano Electronics and Photonics XVIII, PC120090O (5 March 2022); https://doi.org/10.1117/12.2608534
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KEYWORDS
Gallium nitride
Ions
Semiconductor lasers
Strontium
Laser stabilization
Diffraction
Optical design
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