Presentation
4 October 2022 Spin-transfer torque MRAM technology development: tuning MTJ characteristics to build high density stand-alone to low-latency industrial products (Conference Presentation)
Author Affiliations +
Abstract
We present an overview of Everspin’s proprietary Spin-Transfer Torque (STT) MRAM technology. We have optimized our perpendicular MTJ STT-MRAM technology to achieve high-speed reliable switching over the temperature range of -40°C to +85°C with data retention of more than 10 years at +105°C and endurance of greater than 1e15 cycles at -40°C. This advanced STT-MRAM technology has been deployed in commercially available 1Gb ST-DDR4 stand-alone memory and low-latency 64Mb serial peripheral interface (SPI) STT-MRAM products, both integrated on 28 nm CMOS technology.
Conference Presentation
© (2022) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Fred B. Mancoff, Monika Arora, Mark DeHerrera, Sumio Ikegawa, Han K. Lee, Subir Mukherjee, Goei Shimon, Jijun Sun, Iftekhar Rahman, Frederick Neumeyer, Hsuan-Yi Chou, Chin Hoe Tan, Amit Shah, Syed M. Alam, Kerry J. Nagel, and Sanjeev Aggarwal "Spin-transfer torque MRAM technology development: tuning MTJ characteristics to build high density stand-alone to low-latency industrial products (Conference Presentation)", Proc. SPIE PC12205, Spintronics XV, PC122050C (4 October 2022); https://doi.org/10.1117/12.2635022
Advertisement
Advertisement
KEYWORDS
Data centers

Aerospace engineering

CMOS technology

Switching

Magnetism

Manufacturing

Temperature metrology

Back to Top