Presentation
21 March 2023 Carrier dynamics of polar, semipolar, and nonpolar InGaN/GaN LEDs measured by small-signal electroluminescence
Daniel F. Feezell, Arman Rashidi, Xuefeng Li, Mohsen Nami, Morteza Monavarian, Elizabeth DeJong, Robert Armitage
Author Affiliations +
Abstract
The carrier dynamics in InGaN/GaN LEDs are directly tied to their efficiency and maximum modulation speed, which are important metrics for solid-state lighting, displays, and optical communication. We measure the carrier dynamics of nonpolar, semipolar, and commercial c-plane InGaN/GaN LEDs using small-signal electroluminescence methods. Rate equations and a small-signal circuit are used to model the carrier dynamics. The model is fit to the optical frequency response and input impedance of the LEDs to extract the carrier lifetimes and the recombination rates. The results offer insight into the underlying causes of efficiency droop and the green gap, and inform device design strategies.
Conference Presentation
© (2023) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Daniel F. Feezell, Arman Rashidi, Xuefeng Li, Mohsen Nami, Morteza Monavarian, Elizabeth DeJong, and Robert Armitage "Carrier dynamics of polar, semipolar, and nonpolar InGaN/GaN LEDs measured by small-signal electroluminescence", Proc. SPIE PC12421, Gallium Nitride Materials and Devices XVIII, (21 March 2023); https://doi.org/10.1117/12.2651482
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KEYWORDS
Light emitting diodes

Carrier dynamics

Electroluminescence

Modulation

Cladding

Epitaxy

Optical communications

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