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21 March 2023 Influence of threading dislocations on performance of InGaN laser diodes
Agata Bojarska-Cieślińska, Lucja Marona, Julita Smalc-Koziorowska, Szymon Grzanka, Jan Weyher, Dario Schiavon, Piotr Perlin
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Proceedings Volume PC12421, Gallium Nitride Materials and Devices XVIII; (2023) https://doi.org/10.1117/12.2651818
Event: SPIE OPTO, 2023, San Francisco, California, United States
Abstract
We investigate the role of dislocations in nitride light emitters by comparing a set of laser diodes grown on GaN substrates with their counterparts grown on sapphire. Studied structures emit light in the range 383-477nm. We observe decrease in intensity of electroluminescence for samples with low indium composition and high dislocation density. To understand this effect we measured cathodoluminescence and investigated thermal stability of chosen structures. Results show that significance of dislocation related nonradiative recombination increases for low indium content structures due to shorter diffusion path of carriers. Results of TEM and SEM indicate that edge dislocations are the main source of nonradiative recombination in our structures.
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Agata Bojarska-Cieślińska, Lucja Marona, Julita Smalc-Koziorowska, Szymon Grzanka, Jan Weyher, Dario Schiavon, and Piotr Perlin "Influence of threading dislocations on performance of InGaN laser diodes", Proc. SPIE PC12421, Gallium Nitride Materials and Devices XVIII, (21 March 2023); https://doi.org/10.1117/12.2651818
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KEYWORDS
Semiconductor lasers
Indium gallium nitride
Indium
Thermal effects
Visible radiation
Gallium nitride
Sapphire
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