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21 March 2023 X-ray topography analysis of high perfection GaN substrates showing dynamic diffraction effects
Lutz Kirste, Thu Nhi Tran Thi Caliste, José Baruchel, Tomasz Sochacki, Robert Kucharski, Malgorzata Iwinska, Michal Bockowski
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Proceedings Volume PC12421, Gallium Nitride Materials and Devices XVIII; (2023) https://doi.org/10.1117/12.2649878
Event: SPIE OPTO, 2023, San Francisco, California, United States
Abstract
It is demonstrated that Borrmann effect X-ray topography (XRT), based on the anomalous transmission of X-rays for high-perfection and high-absorption crystals, is a robust method to benchmark the structural perfection of GaN substrates. GaN substrates prepared by ammonothermal method or HVPE were investigated. Substrates for these growth methods were analyzed on the basis of native seed or alternatively on the basis of foreign seed. The study shows that only GaN crystals prepared with a native seed approach, both by ammonothermal method and HVPE, exhibit a Borrmann effect and proves the high perfection of the substrate produced in this way.
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Lutz Kirste, Thu Nhi Tran Thi Caliste, José Baruchel, Tomasz Sochacki, Robert Kucharski, Malgorzata Iwinska, and Michal Bockowski "X-ray topography analysis of high perfection GaN substrates showing dynamic diffraction effects", Proc. SPIE PC12421, Gallium Nitride Materials and Devices XVIII, (21 March 2023); https://doi.org/10.1117/12.2649878
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KEYWORDS
Gallium nitride
X-rays
Crystals
Diffraction
X-ray diffraction
Absorption
Image processing
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