Engineering the light extraction efficiency of AlInN nanowire ultraviolet light-emitting diodes with surface passivation and photonic crystal structures

Hieu Pham Trung Nguyen; Ravi Teja Velpula; Barsha Jain; Moulik Patel; Andressa Marangon

doi:10.1117/12.2648003

17 March 2023 Engineering the light extraction efficiency of AlInN nanowire ultraviolet light-emitting diodes with surface passivation and photonic crystal structures

Hieu Pham Trung Nguyen, Ravi Teja Velpula, Barsha Jain, Moulik Patel, Andressa Marangon

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Proceedings Volume PC12430, Quantum Sensing and Nano Electronics and Photonics XIX; PC1243003 (2023) https://doi.org/10.1117/12.2648003
Event: SPIE OPTO, 2023, San Francisco, California, United States

Abstract

We report our study on the enhanced light extraction efficiency (LEE) of the 280nm AlInN nanowire ultraviolet light-emitting diodes (LEDs) using different surface passivation approaches and photonic crystal structures. With a ~ 30nm Si3N4 as surface passivation, the AlInN LED could achieve relatively high LEE of ~ 41.5%, while the unpassivated LED has an average LEE of ~ 23.5%. Moreover, the periodically arranged nanowire LED arrays in hexagonal structure exhibit high LEE of 61.4% which is almost two times higher compared to that of the randomly arranged nanowire LEDs. Additionally, the AlInN nanowire ultraviolet LEDs show highly transverse-magnetic polarized emission.

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Hieu Pham Trung Nguyen, Ravi Teja Velpula, Barsha Jain, Moulik Patel, and Andressa Marangon "Engineering the light extraction efficiency of AlInN nanowire ultraviolet light-emitting diodes with surface passivation and photonic crystal structures", Proc. SPIE PC12430, Quantum Sensing and Nano Electronics and Photonics XIX, PC1243003 (17 March 2023); https://doi.org/10.1117/12.2648003

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KEYWORDS

Nanowires

Ultraviolet light emitting diodes

Light emitting diodes

Photonic crystals

Structural engineering

Ultraviolet radiation

Deep ultraviolet

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