Presentation
17 March 2023 Interband tunnel junctions for AlGaN Ultra-Violet light emitting diodes (Conference Presentation)
Author Affiliations +
Abstract
AlGaN-based ultra-violet light emitting diodes (UV LEDs) are promising for a range of applications, including water purification, air disinfection and medical sensing. However, widespread adoption of UV LEDs is limited by the poor device efficiency. This has been attributed to the strong internal light absorption and poor electrical injection efficiency for the conventional UV LED structures, which typically use an absorbing p-GaN layer for p-type contact. Recent development of ultra-wide banggap AlGaN tunnel junctions enabled a novel UV LED design with the absence of the absorbing p-GaN contact layer. In this presentation, we will discuss recent progress of the AlGaN tunnel junctions and the development of tunnel junction-based UV LEDs, and discuss the challenges and future perspectives for the realization of high power, high efficiency UV LEDs.
Conference Presentation
© (2023) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Agnes Maneesha D. M. Xavier, Arnob Ghosh, Sheikh Ifatur Rahman, Shamsul Arafin, and Siddharth Rajan "Interband tunnel junctions for AlGaN Ultra-Violet light emitting diodes (Conference Presentation)", Proc. SPIE PC12441, Light-Emitting Devices, Materials, and Applications XXVII, PC124410C (17 March 2023); https://doi.org/10.1117/12.2658149
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KEYWORDS
Ultraviolet light emitting diodes

Ultraviolet radiation

Light emitting diodes

Absorption

Aluminum

External quantum efficiency

Polarization

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