Electrically driven deep ultraviolet light emission from hexagonal boron nitride van der Waals heterostructures (Conference Presentation)

Young Duck Kim

doi:10.1117/12.2648042

14 March 2023 Electrically driven deep ultraviolet light emission from hexagonal boron nitride van der Waals heterostructures (Conference Presentation)

Young Duck Kim

Author Affiliations +

Proceedings Volume PC12441, Light-Emitting Devices, Materials, and Applications XXVII; PC124410M (2023) https://doi.org/10.1117/12.2648042
Event: SPIE OPTO, 2023, San Francisco, California, United States

Abstract

Hexagonal boron nitride (hBN) is a two-dimensional van der Waals material and is composed of boron and nitrogen atoms in a hexagonal lattice. hBN is the wide-bandgap semiconductor with a band of 6.4 eV and shows the efficient band edge cathodoluminescence at 215 nm as well as lasing behavior. Here I will present the efficient DUV electroluminescence (EL) in band edge emission at 215 nm as well as broad 303-333 nm emission peaks from hBN van der Waals heterostructure. We observed that 303-333 nm broad emissions with phonon replica of optical phonon energy of hBN based on the Franck-Condon principle, which are attributed to the electric field induced color centers and its highly localized excitons features. I will also present the tunable DUV light emission around band edge emission of 215 nm as a function of electric field direction and discuss the possible origin of DUV EL from hBN van der Waals heterostructures.

Conference Presentation

Citation Download Citation

Young Duck Kim "Electrically driven deep ultraviolet light emission from hexagonal boron nitride van der Waals heterostructures (Conference Presentation)", Proc. SPIE PC12441, Light-Emitting Devices, Materials, and Applications XXVII, PC124410M (14 March 2023); https://doi.org/10.1117/12.2648042

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KEYWORDS

Deep ultraviolet

Boron

Heterojunctions

Light sources

Solid state electronics

Electroluminescence

Semiconductors

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