Presentation
13 March 2024 Single mode distributed feedback interband cascade lasers grown on Si substrate
Daniel Andres Diaz Thomas, Maeva Fagot, Gad Ndemengoye-Kombila, Audrey Gilbert, Diba Ayache, Yves Rouillard, Aurore Vicet, Jean-Baptiste Rodriguez, Alexeï Baranov, Eric Tournie, Laurent Cerutti
Author Affiliations +
Abstract
GaSb-based interband cascaded lasers (ICLs) have now become a leading laser source to cover the mid-infrared (mid-IR) spectral range (3-6 µm). In the last decade, the success of the silicon photonics industry thanks to its optical properties, low cost and easy commercialization of its large wafers size. However, this requires all Sb-based optoelectronics functions on a Si platform. We will discuss about our recent results on single mode distributed feedback interband cascade lasers (ICL) directly grown on Si emitting between 3 and 4 µm.
Conference Presentation
(2024) Published by SPIE. Downloading of the abstract is permitted for personal use only.
Daniel Andres Diaz Thomas, Maeva Fagot, Gad Ndemengoye-Kombila, Audrey Gilbert, Diba Ayache, Yves Rouillard, Aurore Vicet, Jean-Baptiste Rodriguez, Alexeï Baranov, Eric Tournie, and Laurent Cerutti "Single mode distributed feedback interband cascade lasers grown on Si substrate", Proc. SPIE PC12905, Novel In-Plane Semiconductor Lasers XXIII, PC129050Q (13 March 2024); https://doi.org/10.1117/12.3003764
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KEYWORDS
Quantum cascade lasers

Silicon

Semiconductor lasers

Continuous wave operation

Mid-IR

Industrial applications

Laser spectroscopy

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