Dr. Yves Rouillard Profile

Dr. Yves Rouillard

at Univ Montpellier

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Author

Publications (13)

Proceedings Article | 13 March 2024 Presentation

Single mode distributed feedback interband cascade lasers grown on Si substrate

Daniel Andres Diaz Thomas, Maeva Fagot, Gad Ndemengoye-Kombila, Audrey Gilbert, Diba Ayache, Yves Rouillard, Aurore Vicet, Jean-Baptiste Rodriguez, Alexeï Baranov, Eric Tournie, Laurent Cerutti

Proceedings Volume PC12905, PC129050Q (2024) https://doi.org/10.1117/12.3003764

KEYWORDS: Silicon, Quantum cascade lasers, Semiconductor lasers, Mid-IR, Continuous wave operation, Industrial applications, Silicon photonics, Photonic devices, Methane, Laser spectroscopy

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Proceedings Article | 16 February 2018 Presentation + Paper

AlInAsSb for GaSb-based multi-junction solar cells

J. Tournet, Y. Rouillard, E. Tournié

Proceedings Volume 10527, 105270A (2018) https://doi.org/10.1117/12.2289791

KEYWORDS: Gallium antimonide, Aluminum, Photovoltaics, Multijunction solar cells, Epitaxy

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Proceedings Article | 15 May 2014 Paper

Quartz enhanced photoacoustic spectroscopy (QEPAS) with antimonide compounds in very compact systems

T. Nguyen Ba, M. Triki, Quentin Gaimard, Y. Rouillard, A. Vicet

Proceedings Volume 9141, 91410H (2014) https://doi.org/10.1117/12.2051663

KEYWORDS: Semiconductor lasers, Quartz, Sensors, Photoacoustic spectroscopy, Methane, Optical amplifiers, Acoustics, Absorption, Modulation, Beam splitters

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Proceedings Article | 2 May 2014 Paper

Distributed-feedback GaSb-based lasers diodes in the 2.3 to 3.3µm wavelength range

Quentin Gaimard, Tong Nguyen-Ba, Alexandre Larrue, Laurent Cerutti, Yves Rouillard, Olivier Gauthier-Lafaye, Roland Teissier, Aurore Vicet

Proceedings Volume 9134, 91341J (2014) https://doi.org/10.1117/12.2052115

KEYWORDS: Semiconductor lasers, Fabry–Perot interferometers, Waveguides, Cladding, Aluminum, Gallium antimonide, Gallium, Antimony, Holography, Lithography

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Proceedings Article | 4 February 2013 Paper

Recent advances in GaSb-based structures for mid-infrared emitting lasers: spectroscopic study

Grzegorz Sęk, Marcin Motyka, Filip Janiak, Krzysztof Ryczko, Jan Misiewicz, Adam Bauer, Matthias Dallner, Robert Weih, Sven Höfling, Alfred Forchel, Sofiane Belahsene, Guilhem Boissier, Yves Rouillard

Proceedings Volume 8631, 86312O (2013) https://doi.org/10.1117/12.2016699

KEYWORDS: Quantum wells, Indium arsenide, Quantum cascade lasers, Semiconductor lasers, Electrons, Mid-IR, Oscillators, Laser spectroscopy, Gallium antimonide, Luminescence

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Proceedings Article | 21 January 2012 Paper

Quantum well lasers emitting between 3.0 and 3.4 μm for gas spectroscopy

Y. Rouillard, S. Belahsene, M. Jahjah, G. Boissier, P. Grech, G. Narcy, A. Vicet, L. Naehle, M. v. Edlinger, M. Fischer, J. Koeth

Proceedings Volume 8268, 82681E (2012) https://doi.org/10.1117/12.905881

KEYWORDS: Semiconductor lasers, Quantum wells, Continuous wave operation, Absorption, Methane, Pulsed laser operation, Spectroscopy, Cladding, Laser spectroscopy, Gallium antimonide

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Proceedings Article | 24 January 2011 Paper

DFB lasers for sensing applications in the 3.0-3.5 um wavelength range

Marc Fischer, Michael von Edlinger, Lars Nähle, Johannes Koeth, Adam Bauer, M. Dallner, Sven Höfling, Lukas Worschech, Alfred Forchel, Sofiane Belahsene, Yves Rouillard

Proceedings Volume 7945, 79450E (2011) https://doi.org/10.1117/12.871411

KEYWORDS: Quantum cascade lasers, Laser applications, Quantum wells, Continuous wave operation, Semiconductor lasers, Gallium antimonide, Molecular beam epitaxy, Reactive ion etching, Etching, Waveguides

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Proceedings Article | 14 May 2010 Paper

GaSb-based photonic crystal coupled cavity lasers above 2.3 µm

S. Moumdji, A. Larrue, D. Belharet, P. Dubreuil, S. Bonnefont, O. Gauthier-Lafaye, Y. Rouillard, A. Vicet

Proceedings Volume 7713, 77130X (2010) https://doi.org/10.1117/12.853893

KEYWORDS: Mirrors, Photonic crystals, Waveguides, Semiconductor lasers, Absorption, Gallium antimonide, Laser crystals, Mid-IR, Laser damage threshold, Cladding

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Proceedings Article | 8 February 2007 Paper

Toward an AlGaAsSb/GaInAsSb/GaSb laser emitting beyond 3µm

Julie Angellier, David Barat, Guilhem Boissier, France Chevier, Pierre Grech, Yves Rouillard

Proceedings Volume 6485, 64850B (2007) https://doi.org/10.1117/12.698151

KEYWORDS: Semiconductor lasers, Quantum wells, Gallium, Antimony, Aluminum, Absorption, Laser damage threshold, Luminescence, Carbon monoxide, Gallium antimonide

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Proceedings Article | 14 April 2006 Paper

2-2.7μm single frequency tunable Sb-based lasers operating in CW at RT: microcavity and external cavity VCSELs, DFB

A. Garnache, A. Ouvrard, L. Cerutti, D. Barat, A. Vicet, F. Genty, Y. Rouillard, D. Romanini, E. Cerda-Mendez

Proceedings Volume 6184, 61840N (2006) https://doi.org/10.1117/12.663448

KEYWORDS: Quantum wells, Vertical cavity surface emitting lasers, Polarization, Semiconductor lasers, Continuous wave operation, Mirrors, Antimony, Optical microcavities, Transmission electron microscopy

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Proceedings Article | 4 November 2005 Paper

720-mW continuous wave room-temperature operation diode laser emitting at around 2.4µm

Michel Garcia, Yves Rouillard, Eric Tournié, Michel Krakowski

Proceedings Volume 5989, 598908 (2005) https://doi.org/10.1117/12.630661

KEYWORDS: Semiconductor lasers, Continuous wave operation, Femtosecond phenomena, Millimeter wave imaging, Antimony, High power lasers, Laser damage threshold, Indium gallium arsenide antimonide

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Proceedings Article | 1 April 2005 Paper

GaInAsSb/AlGaAsSb laser diodes for the 2- to 3-µm range

Yves Rouillard, J. Angellier, A. Salhi, P. Grech, France Chevrier

Proceedings Volume 5738, (2005) https://doi.org/10.1117/12.597118

KEYWORDS: Semiconductor lasers, Quantum wells, Laser damage threshold, Diodes, Antimony, Gallium, Internal quantum efficiency, Continuous wave operation, Aluminum, Neodymium

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Proceedings Article | 7 April 1998 Paper

Mid-infrared GaSb-InAs-based multiple quantum well lasers

Alexei Baranov, N. Bertru, Y. Cuminal, G. Boissier, Y. Rouillard, J. Nicolas, P. Grech, Andre Joullie, Claude Alibert

Proceedings Volume 3284, (1998) https://doi.org/10.1117/12.304451

KEYWORDS: Quantum wells, Gallium antimonide, Indium arsenide, Semiconductor lasers, Electroluminescence, Gallium indium arsenide antimonide phosphide, Interfaces, Quantum efficiency, Mid-IR, Laser damage threshold

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Showing 5 of 13 publications

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