Structure and doping optimization of SiGe heterojunction internal photoemission detectors for mid-infrared applications

Elizabeth A. Corbin; Michael J. Shaw; Matt R. Kitchin; Milan Jaros; Johannes Konle; Hartmut Presting

doi:10.1117/1.1416695

1 December 2001 Structure and doping optimization of SiGe heterojunction internal photoemission detectors for mid-infrared applications

Elizabeth A. Corbin, Michael J. Shaw, Matt R. Kitchin, Milan Jaros, Johannes Konle, Hartmut Presting

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Optical Engineering, Vol. 40, Issue 12, (December 2001). https://doi.org/10.1117/1.1416695

We present full-scale calculations of highly p-type doped siGe heterojunction internal photoemission (Hip) detectors that operate in the mid-infrared (3- to 5-?m) range of wavelength. We explore the effects of including undoped spacer layers within the highly doped siGe wells, for which a systematic body of experimental data is available to us, and which demonstrates a substantial reduction in the dark current produced by these devices. We model the doping explicitly by means of a screened Coulomb potential, leading to a full description of the resultant impurity band, and compare our calculated optical line shapes with recent state-of-the-art molecular-beam epitaxy experiments. The variation of the optical response with well width, germanium concentration, spacer width and position, and doping concentration are all considered.

©(2001) Society of Photo-Optical Instrumentation Engineers (SPIE)

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Elizabeth A. Corbin, Michael J. Shaw, Matt R. Kitchin, Milan Jaros, Johannes Konle, and Hartmut Presting "Structure and doping optimization of SiGe heterojunction internal photoemission detectors for mid-infrared applications," Optical Engineering 40(12), (1 December 2001). https://doi.org/10.1117/1.1416695

Published: 1 December 2001

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