Wafer scale integration of catalyst dots into nonplanar microsystems

Kjetil Gjerde; Jakob Kjelstrup-Hansen; Lauge Gammelgaard; Peter Bøggild

doi:10.1117/1.2811948

1 October 2007 Wafer scale integration of catalyst dots into nonplanar microsystems

Kjetil Gjerde, Jakob Kjelstrup-Hansen, Lauge Gammelgaard, Peter Bøggild

Journal of Micro/Nanolithography, MEMS, and MOEMS, Vol. 6, Issue 4, 043014 (October 2007). https://doi.org/10.1117/1.2811948

Abstract

In order to successfully integrate bottom-up fabricated nanostructures such as carbon nanotubes or silicon, germanium, or III-V nanowires into microelectromechanical systems on a wafer scale, reliable ways of integrating catalyst dots are needed. Here, four methods for integrating sub-100-nm diameter nickel catalyst dots on a wafer scale are presented and compared. Three of the methods are based on a p-Si layer utilized as an in situ mask, an encapsulating layer, and a sacrificial window mask, respectively. All methods enable precise positioning of nickel catalyst dots at the end of a microcantilever, while avoiding contamination of the used cleanroom process equipment. The methods are suitable for fabrication of scanning probe tips and nanoelectrodes for advanced characterization probes.

©(2007) Society of Photo-Optical Instrumentation Engineers (SPIE)

Citation Download Citation

Kjetil Gjerde, Jakob Kjelstrup-Hansen, Lauge Gammelgaard, and Peter Bøggild "Wafer scale integration of catalyst dots into nonplanar microsystems," Journal of Micro/Nanolithography, MEMS, and MOEMS 6(4), 043014 (1 October 2007). https://doi.org/10.1117/1.2811948

Published: 1 October 2007

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KEYWORDS

Nickel

Etching

Photomasks

Electron beam lithography

Semiconducting wafers

Silicon

Lead

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