In the last decade, the luminescent properties of silicon nanocrystals (Si-nc) have been increasingly studied, since Si-nc
are considered as good candidates for optical interconnects between ever-smaller integrated circuits (ICs) components,
and for the monolithic integration of all-silicon photonic and electronic devices. For these applications, an efficient
coupling between optical and electrical signals within Si-nc structures is required. In this article, the interaction between
simultaneous optical and electrical stimulation of Si-nc is examined. To this end, the photoluminescence (PL) spectra of
Si-nc obtained by ion implantation in a thin (40 to 60 nm) oxide layer of metal-oxide-semiconductor (MOS) devices has
been recorded as a function of variable applied voltage biases at room temperature. Two remarkable features have been
observed: an optical memory effect, due to asymmetric PL intensity modulation with respect to biasing polarity, and an
efficient optical switching of an electric current in reverse bias operation. These results are explained in terms of the
competing effects of the storage and the photogeneration of charge carriers in Si-nc and oxide defects, as indicated by
the correlation between the PL intensity and the current flowing through the MOS devices. Moreover, the use of
positively- and negatively- doped substrates in the MOS structures distinctly shows the different effects of electron
injection over hole injection in Si-nc and their surrounding SiO2 matrix. These novel optoelectrical features of Si-nc are
expected to add more functionality to future all-silicon photonic and electronic ICs.
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