KEYWORDS: Computing systems, 3D displays, Visualization, Biological research, Data processing, Microscopes, 3D metrology, 3D image processing, Eye, Analytical research
This paper describes the optical system Svision including the attachment to PC's monitor and software for preparation and demonstration of stereoscopic images. This software-hardware complex provides possibility to demonstrate 3D stereoscopic objects on the kinescope screen of usual PC's monitor, such objects are interactively controlled by user. Advantages of system Svision over analogues are the following: spectators do not need individual hardware for viewing, there are no need in rework of computer, production of attachments is simple and does not require unique techniques. The complex is used for processing and display of data measured by means of scanning-probe microscope for analysis of complicated 3D objects and also for precision measurement schemes.
The problems of the atom beam formation and its application to the micro- and nanoelectronic manufacturing are considered. The method introducing a useful information into the structured atom beam and focusing this beam is described. This method named the atom projection is relevant to atom optics. Negative detuned laser radiation field controls the beam. Features of the cooling, structuring, information input, focusing processes are discussed. The scheme of the plant using the atom beam with adjustable density distribution. The atom beam cross-section and the processed area are shaped according to the desired profile. The scheme of the atom projector and the functions of its units are described. The spatial resolution of processing and the resolution of surface analysis are evaluated to be about 10 nm and 1 nm correspondingly. Presented process is maskless, in-situ, with high output rating. The atom projector can be applied for the manufacturing, analysis and in-line reconstruction of the IC as well as for basic researchers of matter. Authors consider the nanoelectronic chip manufacturing as the most perspective application for the atom projector.
The problems of neutral atom beam formation and its application to the microelectronic manufacturing are considered. The plant using the focused neutral atom beam is presented. This high-vacuum plant is designed for complex CIP's processing. The scheme of this plant is given. It is divided into the following sections: atom generation, beam preparing, its structuring, compression, and surface treatment. The preparing section is described in detail. The beam is controlled by laser radiation resonant to basic transition in the atom absorption spectrum. The plant forms precisely structured low-temperature atom beams and controls atom density distribution in flow by rather simple projective methods. It allows discussing the possibility of the new, effective and high-automated manufacturing and analysis of micro-object surfaces. Resolution of the suggested method of treatment is proved to be limited only by characteristics of the equipment used. Calculation shows that at modern level of laser technique the spatial resolution of such a process can reach about 10 nm. The resolution of surface analysis is evaluated to be about 1 nm. Probable applications of the presented new technological process for integrated manufacturing, analysis and in-line reconstruction of the IC of super high integration by methods of liquid-free in-situ processing are considered.
One proposes the method of neutral atom beam formation due to effect of neutral atoms long-time localization in the minimums of potentials of intense standing wave of resonant light with simultaneous influence of cooling radiation. For fields of complicated configurati on the resonant light pressure force and the momentum diffusion tensor of two-level atom ensemble are presented. Mathematical modeling is based on the solving of equations for their spatial terms. One shows that with cooling time about 2 - 3 ms and with manipulation of intensity of co-propagated light wave, the arbitrary given cross-section atom density distribution with the contrast up to 1000 can be produced. One demonstrates that size of localization region can be essentially decreased by sweeping of cooling light carrier frequency in the range about 2 - 3 widths of moving atoms spectral transition lines. Low temperature cooling of atoms in the beam and 'soft' output from interaction region allow us to produce the well-manipulated practically aberration-off process. In this case transverse compression of image in cross-section of atomic beam can reach to 106 with given level of contrast. Calculations shows that at modern level of laser technique the spatial resolution of such process can reach to 30 - 50 A. The possibility of using of given method for high-resolution development and the analyses of micro-object surfaces is discussed.
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