This paper discusses the performance of a Silicon based avalanche photodiode, SAP500, that is able to operate in Geiger and linear mode. This detector is based on a ‘reach through’ structure for excellent quantum efficiency, extremely low bulk dark current and noise and can achieve high gains as they are designed for ultra-low light level applications.
KEYWORDS: Sensors, Photodetectors, Indium gallium arsenide, Dark current, Signal detection, Resistance, FT-IR spectroscopy, Absorption spectrum, Signal to noise ratio, PIN photodiodes, Short wave infrared radiation
In this paper we discuss the performance of a new generation of extended InGaAs photodetectors, the IG26H series, with a 2.6 μm wavelength cut off developed by the Laser Components Detector Group. These devices have a low leakage current over a wide range of applied reverse bias voltage and also have a high shunt resistance of 15 kOhms for 0 Volt bias applications. These photodetectors allow for the device operation up to 5 Volts reverse bias while maintaining low leakage of under 50 μAmp for a 1mm diameter active area detector thus assuring linearity of the operation of the detectors.
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