Aeluma has developed breakthrough technology to manufacture high-performance compound semiconductor devices, such as photodetectors and lasers, on large-diameter substrates. This path to scaling and cost reduction could enable broad market adoption of these high-performance technologies. Aeluma’s offerings include photodetectors, photodetector arrays, and lasers for silicon photonics. Key to the technology is the ability to deposit compound semiconductor device structures on mismatched substrates including 12-inch Silicon, to subsequently manufacture devices with large-scale microelectronics foundries, and to integrate optical devices with electronics using either wafer-scale packaging or direct monolithic integration.
Direct epitaxial integration of III-V lasers on Si offers substantial manufacturing cost and scalability advantages. We present our work towards fully monolithic active/passive Si photonics integration by metalorganic chemical vapor deposition (MOCVD) heteroepitaxy. 1.55 µm InP-based Fabry-Perot (FP) lasers on Si by blanket heteroepitaxy are firstly demonstrated, achieving electrically pumped continuous-wave (CW) lasing exceeding 65°C. Aging test shows a stable operation after 200 hours. As a compelling candidate for lasers on Si by virtue of their defect-forgiving nature, InAs/GaAs quantum dot (QD) lasers are then presented. Threshold current as low as 8 mA and high single-facet output power of 200 mW are obtained for devices on GaAs. The QD photoluminescence on Si exhibits the same intensity and full-width half-maximum as on GaAs. At last, we discuss the perspectives on fully integrated III-V/Si photonics by selective area heteroepitaxy (SAH) and present high-quality GaAs-based materials selectively grown in 7 µm ~ 30 µm wide recessed SiO2 on Si. A low defect density of 8.5×106 cm-2 is achieved for the GaAs buffer and the subsequently grown GaAs/InGaAs multi-quantum-well (MQW) microdisk lasers (MDLs) are demonstrating room-temperature lasing under optical pulsed pumping.
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