New SOS MOSFET design with the presence of high-resistance undoped silicon of intrinsic conductivity in the channel region near the source was proposed. 0.75 μm SOS MOSFET with the use of an "insertion" makes it possible to obtain the transistor with characteristics corresponding to a transistor with 0.5 μm topological channel length. This allows the factories to produce new competitive products without significant capital expenditures for the modernization of production capacities.
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