Dr. Gottfried H. Döhler Profile

Dr. Gottfried H. Döhler

Professor at Max-Planck-Institut für die Physik des Lichts

SPIE Involvement:

Author

Publications (29)

Proceedings Article | 27 April 2010 Paper

Continuous wave terahertz emitter arrays for spectroscopy and imaging applications

S. Bauerschmidt, S. Preu, S. Malzer, G. Döhler, L. Wang, H. Lu, A. Gossard

Proceedings Volume 7671, 76710D (2010) https://doi.org/10.1117/12.850090

KEYWORDS: Terahertz radiation, Imaging spectroscopy, Spectroscopy, Antennas, Optical simulations, Sensors, Absorption, Mirrors, Gaussian beams, Superlattices

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Proceedings Article | 2 October 2008 Paper

Coherent superposition of terahertz beams

Sascha Preu, Stefan Malzer, Gottfried Döhler, Lijun Wang

Proceedings Volume 7117, 71170S (2008) https://doi.org/10.1117/12.800250

KEYWORDS: Terahertz radiation, Superposition, Active remote sensing, Phase modulation, Semiconductors, Antennas, Continuous wave operation, Chemical elements, Sensors, Semiconductor lasers

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Proceedings Article | 19 April 2006 Paper

Highly collimated and directional continous-wave Terahertz emission by photomixing in semiconductor device arrays

S. Preu, S. Malzer, G. Döhler, J. Zhang, Z. H. Lu, L. J. Wang

Proceedings Volume 6194, 61940F (2006) https://doi.org/10.1117/12.662847

KEYWORDS: Terahertz radiation, Semiconductors, Microlens array, Phased arrays, Sensors, Collimation, Laser damage threshold, Antennas, Quantum cascade lasers, Gallium arsenide

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Proceedings Article | 27 February 2006 Paper

Enhanced light-target interaction using a novel anti-resonant waveguide concept

Oliver Schmidt, Michael Bassler, Peter Kiesel, Oliver Wolst, Gottfried Döhler

Proceedings Volume 6094, 60940F (2006) https://doi.org/10.1117/12.648245

KEYWORDS: Waveguides, Liquids, Glasses, Refractive index, Luminescence, Reflection, Light wave propagation, Interfaces, Water, Waveguide modes

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Proceedings Article | 1 September 2004 Paper

Optical far-IR wave generation - state-of-the-art and advanced device structures

Viktor Krozer, B. Leone, Hartmut Roskos, Torsten Loffler, Gabriel Loata, Gottfried Dohler, Frank Renner, S. Eckardt, S. Malzer, A. SchwanhauBer, Tjeerd Klaassen, A. Adam, Paolo Lugli, Aldo Di Carlo, Maurizio Manenti, Gaetano Scamarcio, M. Vitiello, Michael Feiginov

Proceedings Volume 5466, (2004) https://doi.org/10.1117/12.554783

KEYWORDS: Terahertz radiation, Quantum cascade lasers, Electrons, Waveguides, Antennas, Gallium arsenide, Semiconductor lasers, Resistance, Photodiodes, Scattering

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Proceedings Article | 4 June 2002 Paper

Optically pumped semiconductor thin-disk laser with external cavity operating at 660 nm

Moritz Mueller, Norbert Linder, Christian Karnutsch, Wolfgang Schmid, Klaus Streubel, Johann Luft, Svent-Simon Beyertt, Adolf Giesen, Gottfried Doehler

Proceedings Volume 4649, (2002) https://doi.org/10.1117/12.469242

KEYWORDS: Semiconductor lasers, Quantum wells, Absorption, Semiconductors, Mirrors, Reflectivity, Optical pumping, Optical semiconductors, Pulsed laser operation, Aluminium gallium indium phosphide

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Proceedings Article | 12 June 2001 Paper

Low-capacitance photoconductive detectors for extremely low optical power fabricated by focused ion-beam doping and overgrowth

Markus Vitzethum, Martin Ruff, Ralf Schmidt, Peter Kiesel, S. Malzer, Joerg Koch, Andreas Wieck, Gottfried Doehler

Proceedings Volume 4288, (2001) https://doi.org/10.1117/12.429439

KEYWORDS: Promethium, Sensors, Capacitance, Diodes, Doping, Electrons, Ion beams, Single photon, Photodiodes, Single photon detectors

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Proceedings Article | 12 June 2001 Paper

High-speed low-energy photoconductive receiver with high gain

Merlin Welker, D. Zipperer, S. Malzer, Reiner Windisch, Paul Heremans, Gottfried Doehler

Proceedings Volume 4288, (2001) https://doi.org/10.1117/12.429395

KEYWORDS: Receivers, Diodes, Sensors, Light emitting diodes, Switching, Optical switching, Optical interconnects, Optoelectronics, Silicon, Gallium arsenide

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Proceedings Article | 14 May 2001 Paper

Light extraction mechanisms in surface-textured light-emitting diodes

Reiner Windisch, Stefan Meilnschmidt, Cathleen Rooman, Lars Zimmermann, Barundeb Dutta, Maarten Kuijk, Peter Kiesel, Gottfried Doehler, Gustaaf Borghs, Paul Heremans

Proceedings Volume 4278, (2001) https://doi.org/10.1117/12.426837

KEYWORDS: Light emitting diodes, External quantum efficiency, Internal quantum efficiency, Light scattering, Reflection, Monte Carlo methods, Quantum efficiency, Scattering, Temperature metrology, Photon transport

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Proceedings Article | 17 April 2000 Paper

Nonresonant-cavity light-emitting diodes

Reiner Windisch, Maarten Kuijk, Barundeb Dutta, Alexander Knobloch, Peter Kiesel, Gottfried Doehler, Gustaaf Borghs, Paul Heremans

Proceedings Volume 3938, (2000) https://doi.org/10.1117/12.382829

KEYWORDS: Light emitting diodes, External quantum efficiency, Light scattering, Scattering, Sensors, Reflection, Microlens, Quantum efficiency, Gallium arsenide, Optical fibers

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Proceedings Article | 14 April 1999 Paper

Frequency limits of high-efficiency non-resonant cavity light-emitting diodes

Paul Heremans, Reiner Windisch, Alexander Knobloch, J. Potemans, Barundeb Dutta, Gottfried Doehler, Gustaaf Borghs

Proceedings Volume 3621, (1999) https://doi.org/10.1117/12.344479

KEYWORDS: Light emitting diodes, Diodes, External quantum efficiency, Switching, Eye, Mirrors, Quantum efficiency, Resistance, Capacitance, Time metrology

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Proceedings Article | 14 April 1999 Paper

Size dependence of record-efficiency non-resonant cavity light-emitting diodes

Reiner Windisch, Paul Heremans, Barundeb Dutta, Stefan Nemeth, Alexander Knobloch, Gottfried Doehler, Gustaaf Borghs

Proceedings Volume 3621, (1999) https://doi.org/10.1117/12.344480

KEYWORDS: Light emitting diodes, External quantum efficiency, Gallium arsenide, Mirrors, Optical spheres, Waveguides, Etching, Dry etching, Sensors, Oxidation

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Proceedings Article | 7 July 1998 Paper

Polarization anisotropy in ordered GaInP optoelectronic devices

Erik Greger, T. Kippenberg, Peter Kiesel, Michael Moser, Karlheinz Gulden, Gottfried Doehler

Proceedings Volume 3283, (1998) https://doi.org/10.1117/12.316718

KEYWORDS: Polarization, Absorption, Indium gallium phosphide, Anisotropy, Switching, Crystals, Switches, Sensors, Light, Diodes

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Proceedings Article | 5 May 1998 Paper

Novel VCSEL-based smart pixel for high-contrast, high-gain, and high-speed optical switching

Bernhard Knuepfer, Merlin Welker, Christian Jung, Dieter Wiedenmann, Karl Ebeling, Ch. Oehler, W. Geisselbrecht, S. Malzer, Gottfried Doehler

Proceedings Volume 3288, (1998) https://doi.org/10.1117/12.307586

KEYWORDS: Vertical cavity surface emitting lasers, Diodes, Switching, Receivers, Sensors, Logic, Gallium arsenide, Data conversion, Optical switching, Optoelectronics

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Proceedings Article | 7 April 1998 Paper

Systematic photoluminescence and electroluminescence study of high-efficiency surface-textured thin-film light-emitting structures

Reiner Windisch, Paul Heremans, Barundeb Dutta, S. Schoberth, Jan Genoe, Maarten Kuijk, Peter Kiesel, Gottfried Doehler, Gustaaf Borghs

Proceedings Volume 3279, (1998) https://doi.org/10.1117/12.304414

KEYWORDS: Etching, Mirrors, Light emitting diodes, Luminescence, Gallium arsenide, Absorption, Optical spheres, Epitaxial lateral overgrowth, Cladding, Lithography

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Proceedings Article | 19 April 1996 Paper

Fast electro-optic modulation with selectively contacted n-i-p-i structures

Uli Pfeiffer, Michael Kneissl, Peter Kiesel, Gottfried Doehler, John Smith

Proceedings Volume 2694, (1996) https://doi.org/10.1117/12.238396

KEYWORDS: Switching, Modulation, Resistance, Modulators, Absorption, Quantum wells, Capacitance, Electro optics, Gallium arsenide, Chlorine

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Proceedings Article | 19 April 1996 Paper

Fast MSM modulators based on the two-dimensional Franz-Keldysh effect in MQW structures

Michael Kneissl, Peter Kiesel, Norbert Linder, Angela Thranhardt, Helmut Grothe, Gottfried Doehler

Proceedings Volume 2694, (1996) https://doi.org/10.1117/12.238397

KEYWORDS: Absorption, Modulators, Excitons, Quantum wells, Capacitance, Modulation, Electrooptic modulators, Metals, Gallium arsenide, Semiconductors

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Proceedings Article | 10 January 1996 Paper

Novel monolithic waveguide-based smart pixel for high-contrast, high-gain, and high-speed optical switching

Bernhard Knuepfer, Peter Kiesel, Michael Kneissl, Norbert Mueller, Ulrich Hilburger, Stefan Dankowski, Arno Foerster, Gottfried Doehler

Proceedings Volume 2695, (1996) https://doi.org/10.1117/12.229954

KEYWORDS: Waveguides, Modulators, Sensors, Diodes, Switching, Receivers, Optoelectronics, Optical switching, Switches, Absorption

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Proceedings Article | 11 May 1994 Paper

Demonstration of extremely low switching energies using new n-i-p-i-based smart pixels

Michael Kneissl, Peter Kiesel, Peter Riel, K. Reingruber, Karlheinz Gulden, Stefan Dankowski, Erik Greger, A. Hoefler, Bernhard Knuepfer, Gottfried Doehler, X. Wu, John Smith

Proceedings Volume 2139, (1994) https://doi.org/10.1117/12.175701

KEYWORDS: Switching, Switches, Modulators, Diodes, Capacitance, Absorption, Electro optics, Information operations, Optical switching, Optoelectronics

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Proceedings Article | 19 November 1993 Paper

In-situ structured MBE-grown crystals for applications in optoelectronics

Karlheinz Gulden, Michael Kneissl, Peter Kiesel, A. Hoefler, S. Malzer, Gottfried Doehler, X. Wu, John Smith

Proceedings Volume 1985, (1993) https://doi.org/10.1117/12.162748

KEYWORDS: Crystals, Optoelectronics, Doping, Fabrication, Molecular beams, Reflectivity, Mirrors, Excitons, Optoelectronic devices, Superlattices

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Proceedings Article | 19 November 1993 Paper

Optical bistability of p-i-n and n-i-p-i structures at very low optical power

Peter Kiesel, Karlheinz Gulden, A. Hoefler, Michael Kneissl, Bernhard Knuepfer, Stefan Dankowski, Peter Riel, X. Wu, John Smith, Guenter Weimann, Gottfried Doehler

Proceedings Volume 1985, (1993) https://doi.org/10.1117/12.162754

KEYWORDS: Bistability, Switching, Absorption, Switches, Electrooptic modulators, Electro optics, Modulators

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Proceedings Article | 3 September 1992 Paper

N-i-p-i-based high-speed detectors and bistable switches with gain

Peter Riel, Peter Kiesel, M. Ennes, Thomas Gabler, Michael Kneissl, Gerhard Boehm, Guenther Traenkle, Guenter Weimann, Karlheinz Gulden, X. Wu, John Smith, Gottfried Doehler

Proceedings Volume 1675, (1992) https://doi.org/10.1117/12.137614

KEYWORDS: Sensors, Absorption, Switches, Switching, Diffusion, Quantum wells, Physics, Resistors, Superlattices, Capacitance

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Proceedings Article | 3 September 1992 Paper

Transition from miniband to Wannier-Stark states in GaAs-AlAs superlattices

Klaus Schmidt, Alessandra D'Intino, Norbert Linder, M. Tuna, Gottfried Doehler, Holger Grahn, Klaus Ploog, K. Kawashima, Kenzo Fujiwara

Proceedings Volume 1675, (1992) https://doi.org/10.1117/12.137619

KEYWORDS: Absorption, Electrons, Stereolithography, Quantum wells, Superlattices, Modulation, Double positive medium, Physics, Spectroscopy, Gallium arsenide

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Proceedings Article | 1 February 1992 Paper

n-i-p-i and hetero n-i-p-i doping superlattices physics and device applications

Gottfried Doehler

Proceedings Volume 1523, (1992) https://doi.org/10.1117/12.56989

KEYWORDS: Doping, Superlattices, Absorption, Modulation, Crystals, Electrons, Luminescence, Diffusion, Photons, Gallium arsenide

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Artificial semiconductors compared of a periodic sequence of thin n- and p-doped layers, possibly with undoped (i-) layers in between, exhibit a number of unique features by which they differ from uniform bulk crystals as well as from semiconductors with a compositional superlattice. The properties which make them particularly appealing as a new kind of semiconductor are the tunability of carrier density, bandgap, two-dimensional subband structure, and recombination lifetime in combination with an enormous flexibility in tailoring. This tailoring includes the possibility of an additional periodic modulation of composition ('hetero n-i-p-i'). This can be used to reduce the disorder induced potential fluctuations by separating the free carriers from their parent impurity atoms, similar to the well-known 'modulation doping.' The possibility of varying conductivity, absorption coefficient, optical gain, and luminescence spectra by light or external electrical potentials implies new concepts for photodetectors, tunable light sources, and modulators. The long recombination lifetimes result in large, low-power nonlinearities of the optical absorption coefficient and the refractive index, including optical bistability. After a short review of the basic theory and fundamental properties of n-i-p-i structures we will demonstrate a number of properties which have turned out to be of particular interest for applications such as spectrally tunable electroluminescence, huge photoconductivity, strong electro-absorption and -refraction, and large optical non- linearities on homo- and hetero n-i-p-i systems. We also present results on a newly discovered peculiarity. N-i-p-i structures exhibit a giant ambipolar diffusion coefficient, which can exceed typical bulk values by more than two orders of magnitude and which allows for a control of the 'adjustable recombination lifetimes' down into the sub-ns regime. Finally we will present a new n-i-p-i-based concept of 'smart pixels' as fast optical logic gates at extremely low optical and electrical power dissipation.

Proceedings Article | 1 March 1991 Paper

Nonlinear optical properties of nipi and hetero nipi superlattices and their application for optoelectronics

Gottfried Doehler

Proceedings Volume 1361, (1991) https://doi.org/10.1117/12.24375

KEYWORDS: Superlattices, Optoelectronics, Electron holes, Plasma, Optical properties, Electrons, Doping, Plasma generation, Crystals, Quantum wells

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Proceedings Article | 1 October 1990 Paper

N-i-p-i based new concept for optical logic gates

Gottfried Doehler, Peter Kiesel, H. Lin, Peter Riel, Karl Ebeling, Jeffrey Miller

Proceedings Volume 1283, (1990) https://doi.org/10.1117/12.20735

KEYWORDS: Switches, Modulators, Switching, Photons, Absorption, Optical logic, Physics, Modulation, Superlattices, Electrons

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Proceedings Article | 1 August 1990 Paper

N-i-p-i based new concept for optical logic gates

Gottfried Doehler, Peter Kiesel, H. Lin, Peter Riel, Karl Ebeling, Jeffrey Miller

Proceedings Volume 1280, (1990) https://doi.org/10.1117/12.20660

KEYWORDS: Switches, Modulators, Switching, Photons, Absorption, Optical logic, High speed photonics, Modulation, Electrons, Bistability

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Proceedings Article | 1 August 1990 Paper

Photoreflectance of GaAs/AlGaAs hetero n-i-p-i structures

Ulrich Keil, Michael Forkel, Norbert Linder, Klaus Schmidt, Gottfried Doehler, Jeffrey Miller

Proceedings Volume 1286, (1990) https://doi.org/10.1117/12.20863

KEYWORDS: Quantum wells, Electrons, Gallium arsenide, Dielectrics, Absorption, Modulation, Spectroscopy, Temperature metrology, Photons, Information operations

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Proceedings Article | 1 August 1990 Paper

Electromodulation and photomodulation spectroscopy of long-period doping superlattices

Norbert Linder, W. El-Banna, Ulrich Keil, Klaus Schmidt, Gottfried Doehler, Jeffrey Miller, Karl Ebeling

Proceedings Volume 1286, (1990) https://doi.org/10.1117/12.20865

KEYWORDS: Modulation, Spectroscopy, Gallium arsenide, Doping, Absorption, Superlattices, Dielectrics, Particles, Refractive index, Optical properties

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Showing 5 of 29 publications

Proceedings Volume Editor (6)

SPIE Conference Volume | 19 April 1996

Quantum Well and Superlattice Physics VI

SPIE Conference Volume | 11 May 1994

Quantum Well and Superlattice Physics V

SPIE Conference Volume | 3 September 1992

Quantum Well and Superlattice Physics IV

SPIE Conference Volume | 1 October 1990

Quantum Well and Superlattice Physics III

SPIE Conference Volume | 18 August 1988

Quantum Well and Superlattice Physics II

Showing 5 of 6 publications

Conference Committee Involvement (16)

Terahertz Physics, Devices, and Systems X: Advanced Applications in Industry and Defense

17 April 2016 | Baltimore, MD, United States

Terahertz Physics, Devices, and Systems IX: Advanced Applications in Industry and Defense

22 April 2015 | Baltimore, MD, United States

Terahertz Physics, Devices, and Systems VIII: Advanced Applications in Industry and Defense

5 May 2014 | Baltimore, MD, United States

Terahertz Physics, Devices, and Systems VII: Advanced Applications in Industry and Defense

29 April 2013 | Baltimore, Maryland, United States

Terahertz Physics, Devices, and Systems VI: Advance Applications in Industry and Defense

23 April 2012 | Baltimore, Maryland, United States

Terahertz Physics, Devices, and Systems V: Advance Applications in Industry and Defense

25 April 2011 | Orlando, Florida, United States

Terahertz Physics, Devices, and Systems IV: Advanced Applications in Industry and Defense

5 April 2010 | Orlando, Florida, United States

Terahertz Physics, Devices, and Systems III: Advanced Applications in Industry and Defense

14 April 2009 | Orlando, Florida, United States

Terahertz Physics, Devices, and Systems II

11 September 2007 | Boston, MA, United States

Terahertz Physics, Devices, and Systems

2 October 2006 | Boston, Massachusetts, United States

Quantum Well and Superlattice Physics VI

29 January 1996 | San Jose, CA, United States

Quantum Well and Superlattice Physics V

24 January 1994 | Los Angeles, CA, United States

Quantum Well and Superlattice Physics IV

23 March 1992 | Somerset, NJ, United States

Quantum-Well and Superlattice Physics III

18 March 1990 | San Diego, CA, United States

Quantum Well and Superlattice Physics II

14 March 1988 | Newport Beach, CA, United States

Quantum Well and Superlattice Physics

23 March 1987 | Bay Point, FL, United States

Showing 5 of 16 Conference Committees

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