Large scale optoelectronic monolithic integration for optical fiber communication makes more and more optoelectronic
active devices and passive components integrate into a single chip. It is necessary to provide enough wide gain spectrum
to satisfy the requirement from each device. In this paper, based the analysis on the gain spectrum of InGaAsP/InP
quantum well, the dependence of its gain spectrum bandwidth on the well width and doping concentration was derived.
An asymmetric quantum well with the same doping concentration and different well width was design to realize the
destination. The simulation results prove that the asymmetric quantum well indeed make the gain spectrum wider. Then
the asymmetric quantum wells were grown successfully by low pressure MOCVD at 665°C. The full width at half
maximum (FWHM) of 115nm was observed in its amplified spontaneous emission (ASE) spectrum, which was flatter
and wider than that of the symmetric quantum wells.
For device analysis and optimization, a model based on Transfer Matrices Method was built to simulation the
performance of a new integrated device. This novel DFB laser was composed of two serial sections to provide selectable
wavelengths. The periods of two Bragg gratings were different and were chosen to achieve a spacing of 20nm between
the two corresponding Bragg wavelengths. The model is more simple and convenient to simulate optical integrated
device than other direct simulation methods used before. The simulation results prove that this novel waveguide structure
of the serial DFB lasers is feasible. The integrated optical device was fabricated and two wavelengths of 1.51um and
1.53um were realized under different work conditions.
Width varied quantum wells show a more flat and wide gain spectrum (about 115nm) than that of identical miltiple quantum well. A new fabricating method was demonstrated in this paper to realize two different Bragg grating in an identical chip using traditional holographic exposure. A wavelength selectable DFB laser based on this material grown by MOVPE was presented. Two stable distinct single longitudinal mode of 1510nm and 1530nm with SMSR of 45 dB were realized.
Optoelectronic packaging has become a most important factor that influences the final performance and cost of the module. In this paper, low microwave loss coplanar waveguide(CPW) on high resistivity silicon(HRS) and precise V groove in silicon substrate were successfully fabricated. The microwave attenuation of the CPW made on HRS with the simple process is lower than 2 dB/cm in the frequency range of 0~26GHz, and V groove has the accuracy in micro level and smooth surface.These two techniques built a good foundation for high frequency packaging and passive coupling of the optoelectronic devices. Based on these two techniques, a simple high resistivity silicon substrate that integrated V groove and CPW for flip-chip packaging of lasers was completed. It set a good example for more complicate optoelectronic packaging.
In this paper, a quasi-three-dimension theoretical model for the Vertical-Cavity Surface-Emitting Laser with oxide-confined layers is showed. The distributions of the equal-potential line, injected current density, carrier concentration and the optical field distribution in the cavity are calculated self-consistently by the finite difference method. The influences of the light output window's radius and oxide-confined layers window's radius are studied. At the same time, we study the influence of the N-type DBR on some characteristics of the VCSEL. The results show that there would be a large difference with practical VCSEL ifthe N-type DBR layers were neglected.