Dr. Jonathan Schuster
Electronics Engineer at DEVCOM Army Research Lab
SPIE Involvement:
Area of Expertise:
infrared detectors , physics of semiconductor devices , ultraviolet avalanche photodiodes
Profile Summary

Jonathan Schuster received a B.S. degree in physics and a minor in Computer Science from the University at Buffalo (UB) in 2010, a M.S. degree in Electrical Engineering from Boston University (BU) in 2013 and a Ph.D. degree in Electrical Engineering from Boston University in 2014. He joined the U.S. Army DEVCOM Army Research Laboratory (ARL) as a Postdoctoral Research Fellow (Post-Doc ) in 2014 and then as an Electronics Engineer in 2016. He has also held a position as a Visiting Researcher at Boston University since 2015. While an ARL Post-Doc, he represented Post-Docs to the ARL Office of the Director as the Adelphi Laboratory Center (ALC) Co-Chair of the ARL Post-Doc Association (PDA) from 2015 to 2016. In 2016 he began serving as the Deputy Lead & Steering Committee Member of ARL's Center for Semiconductor Modeling (CSM) of Materials and Devices, rising to CSM Lead in 2021. Concurrently, in 2018 he began managing ARL's Modeling Research Environment (MRE) and since 2020 he has been leading ARL's UV SPAD Development. His current research activities pertain to modeling of optoelectronic devices, including infrared (IR) photovoltaic pixel arrays and ultraviolet (UV) avalanche photodiodes (APDs). Former activities include developing new hybridization techniques to hybridize pixel arrays to readout integrated circuits (ROICs) and modeling fiber optic systems.
Publications (17)

Proceedings Article | 15 June 2023 Presentation + Paper
Anand Sampath, Gregory Garrett, Jonathan Schuster, Jeremy Smith, Michael Derenge, Daniel Habersat, Brenda VanMil, Reza Gandhi, Sergei Dolinsky, Edwin Heilweil, Joshua Bienfang, Enrico Bellotti, Michael Wraback
Proceedings Volume 12512, 1251206 (2023) https://doi.org/10.1117/12.2663387
KEYWORDS: Silicon carbide, Single photon avalanche diodes, Avalanche photodetectors, Temporal resolution, Ultraviolet radiation

Proceedings Article | 10 March 2023 Presentation + Paper
Proceedings Volume 12415, 1241509 (2023) https://doi.org/10.1117/12.2649236
KEYWORDS: Silicon carbide, Avalanche photodetectors, Doping, Absorption, Deep ultraviolet, Ultraviolet radiation, Avalanche photodiodes, Finite-difference time-domain method, Design and modelling, Ionization

Proceedings Article | 31 January 2020 Presentation + Paper
Proceedings Volume 11288, 112880H (2020) https://doi.org/10.1117/12.2547616
KEYWORDS: Gallium, Diffusion, Diodes, Interfaces, Photodiodes, Quantum efficiency, Arsenic, Temperature metrology, Staring arrays, Absorption

Proceedings Article | 7 May 2019 Presentation + Paper
Proceedings Volume 11002, 110020W (2019) https://doi.org/10.1117/12.2521907
KEYWORDS: Sensors, Quantum efficiency, Mid-IR, Heterojunctions, Temperature metrology, Absorption, Superlattices, Diodes, Diffusion, Solids

Proceedings Article | 9 May 2018 Presentation + Paper
Proceedings Volume 10624, 1062405 (2018) https://doi.org/10.1117/12.2315838

Showing 5 of 17 publications
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