A 405 nm LDs crystallization method of a-Si has been applied to the processing of bottom gate (BG) type
microcystalline (μc-) Si TFT for the first time. We have successfully demonstrated superior I-V characteristics of BG μc-
Si TFTs. In order to verify the validity of our process, we performed a heat flow simulation and compared commercially
available lasers having wavelengths of 405, 445 and 532 nm. The simulation explained well the experimental results and
showed that the wavelength is a crucial factor on uniformity, energy efficiency, and process margin and the 405 nm gave
the best results among the three wavelengths.
We successfully demonstrated a multi-striped InGaN-based laser diode (LD) array with an optical output power of 6.3 W
under continuous wave operation. The LD array was operated on a conventional metal package without any cooling
system. The world highest power operation as InGaN LD array is attributed to thermally optimized layout design taking
advantage of highly efficient wide-striped emitters.
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