A high performance, 128×128 pixel, snapshot Readout Integrated Circuit (ROIC) for IRFPA has been fabricated with
0.5μm Double Poly Double Metal (DPDM) n-well CMOS process. The pixel cell circuit uses an improved direct
injection structure with only four transistors to maintain large enough integration capacitror. One pixel cell occupies an
area of 50×50μm2. Each row's pixel signals are readout to the column amplifiers row by row in parallel, while the
column amplifiers are reset after each row's pixel signals are readout. The whole pixel cells are reset wholly after a frame
signals are all readout. The ROIC structure also provides dynamic image transpositionxinyuanjing xinyuanjing xi
(Invert, Revert) function to support a wide range of system requirements. It still has a build-in temperature sensor to
detect the temperature of the chip. The measurement results show that the readout chip works well at both room
temperature and 77K with 5V supply voltage. The fabricated chip has a maximum charge storage capacity of 6.48×107
electrons and the active power dissipation of about 10mW. The proposed CMOS ROIC structure has been applied to
IRFPAs.
This paper reports the design and test of an improved direct-injection readout circuit for infrared focal plane arrays
(IRFPA). In this circuit, two selectable capacitors are added in the pixel to accommodate the wide range of illumination
conditions. The circuit also supports image transposition (invert/revert). A 128×128 pixels readout circuit chip which uses
this improved readout circuit structure has been fabricated. A simple test bench is established to verify the availability of
the readout chip. The testing method and results are also presented in this paper. The testing results show the good
performance of the readout chip.
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