Dr. Lu Wang Profile

Dr. Lu Wang

at Institute of Physics CAS

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Proceedings Article | 6 October 2017 Paper

Infrared detector based on interband transition of semiconductor quantum well within p-n junction

Ling Sun, Jie Liu, Haiqiang Jia, Wenxin Wang, Lu Wang, Hong Chen

Proceedings Volume 10438, 1043804 (2017) https://doi.org/10.1117/12.2276939

KEYWORDS: Infrared detectors, Quantum wells, Semiconductors, Absorption, Sensors, Sensor performance, Prototyping

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Resonant excited carriers in quantum well will relax to the ground states and cannot escape from quantum wells to form photocurrent. However, it was recently observed that most of the photo-excited carriers in InGaAs/GaAs quantum wells within a p-n junction escape from quantum wells and form photocurrent rather than relax to the ground state of the quantum wells. The absorption coefficient of multiple quantum wells is also enhanced by a p-n junction. According to the phenomenon, a novel photon detector based on interband transition of strained InGaAs/GaAs quantum wells was fabricated. Without an anti-reflection layer, the external quantum efficiency up to 31% with only 100 nm absorption thickness was measured, corresponding an absorption coefficient of 3.7×10⁴ cm^-1 that is obviously higher than previously reported values. The room temperature detectivity of the device was 1.43×10¹³ cm Hz^1/2 W^-1. For strained InAsSb/GaSb quantum wells material system, the detector showed a narrow response range from 2.1 μm to 3.0 μm with a peak around 2.6 μm at 200 K and a wide response range from 3.5 μm to 5.7 μm. The photon detectors based on interband transition show great potential applications in infrared detection operating at high temperature.

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