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Pavel Panchenko
at Bryansk State Technical Univ
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Publications (1)
Proceedings Article | 30 December 2016 Paper
I-V characteristics simulation of silicon carbide Ti/4H-SiC Schottky diode
P. Panchenko, S. Rybalka, A. Malakhanov, E. Krayushkina, A. Radkov
Proceedings Volume 10224, 102240Y (2016) https://doi.org/10.1117/12.2267088
KEYWORDS: Diodes, Silicon carbide, Electrons, Titanium, TCAD, Data modeling, Diffusion, Electronics, Ionization, Reverse modeling
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