This paper presents a dynamic range expansion technique of CMOS image sensors with dual charge storage in a pixel
and multiple exposures. Each pixel contains two photodiodes, PD1 and PD2 whose sensitivity can be set independently
by the accumulation time. The difference of charge accumulation time in both photodiode can be manipulated to expand
the dynamic range of the sensor. It allows flexible control of the dynamic range since the accumulation time in PD2 is
adjustable. The multiple exposure technique used in the sensor reduces the motion blur in the synthesized wide dynamic
range image when capturing fast-moving objects. It also reduces the signal-to-nose ratio dip at the switching point of the
PD1 signal to the PD2 signals in the synthesized wide dynamic range image. A wide dynamic range camera with
320x240 pixels image sensor has been tested. It is found that the sampling of 4 times for the short accumulation time
signals is sufficient for the reduction of motion blur in the synthesized wide dynamic range image, and the signal-to-noise
ratio dip at the switching point of the PD1 signal to the PD2 signal is improved by 6 dB using 4 short-time
exposures.
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