Multi Form Pluggable (MFP) 8-channel optical link modules for OC-3 (STM-1) and OC-12 (STM-4) intermediate reach (IR-a) applications have been developed. The MFP module can increase packaging density by 60% and reduce power consumption by 60% for virtually the same cost compared to the use of conventional single-channel 8 Small Form Pluggable (SFP) modules.
We report on various types of ultrafast all-optical signal processing with hybrid-integrated Symmetric-Mach-Zehnder (HI-SMZ) all-optical switches driven by 40-Gb/s or 40-GHz optical pulses. To operate HI-SMZ switches with such high-repetition excitation, we use longer semiconductor optical amplifiers (SOAs) as nonlinear phase shifters than we previously used. We demonstrate that extending the SOA length is useful for increasing carrier injection and thus enhancing the nonlinear phase shift in SOAs. We show 3R regeneration and wavelength conversion at 42 Gb/s using HI-SMZ switches with longer SOAs. We also show error-free optical demultiplexing of 168- or 336-Gb/s signal pulses with HI-SMZ switches driven by 42-GHz control pulses.
We demonstrate various types of ultrafast all-optical signal processing with Symmetric-Mach-Zehnder (SMZ) all-optical switches incorporating semiconductor optical amplifiers. By using a hybrid-integrated SMZ switch, error-free operations of 336-Gb/s demultiplexing, 42-Gb/s pulse regeneration, and 42-Gb/s wavelength conversion have been achieved. We have also verified the capability of higher bit rate operation by showing 84-Gb/s pulse regeneration and 168-Gb/s wavelength conversion with the variants of the SMZ switch.
Several important techniques for fabricating micro-cavity semiconductor lasers including surface emitting lasers have been developed. Reactive ion beam etch (RIBE) for GaA1As and GaInAsP is employed and its condition for vertical fine etch under low damages and removal of residual damages are made clear. Passivation by sulfur is introduced to the fabrication process. Regrowth techniques for DII structures by LPE and MOCVD has been established. Some device applications are discussed. 1. MICRO-ETCHING PROCESS Micro-cavity lasers including a vertical cavity surface emitting laser1 are attracting the research interest for optical parallel processing and parallel light wave systems. In order to realize micron-order or sub-micron laserdevices the technology of micro-fabrication must be established. In this study the total fabrication technology has been almost completed. First fine and low damage etching condition by ultrahigh vacuum background RIBE using a Cl2 gas has been made clear. We have found an isotropic etching condition for the vertical side wall formation and good mask traceability i. e. the acceleration voltage is 500 V and substrate temperature is 150 C with a 5000A thickness Si02 mask. Residual damages induced on the surface and the side wall are characterized by photo-luminescence and making stripe lasers. Figure 1 is the histogram of the nominal threshold current density for (a) oxide-defined stripe lasers (b) RIBE etched and LPE regrown BH-lasers using an LPE grown DII wafer (LPE/LPE) and (c) RIBE etched