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Yun Han

at TEL Technology Ctr America LLC

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Proceedings Article | 24 March 2020 Presentation

Plasma process of Silicon Germanium alloy: molecular dynamics simulation study (Conference Presentation)

Hojin Kim, Yun Han, Mingmei Wang, Andrew Metz, Peter Biolsi

Proceedings Volume 11329, 1132908 (2020) https://doi.org/10.1117/12.2552039

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We performed molecular dynamics (MD) simulation to study the evaluation of silicon germanium alloy (SiGe) damage with oxidation behavior after plasma gas treatments. Our study provides a fundamental understanding of the atomistic/ molecular level of SiGe behavior after plasma etching of a contact etch stop layer (CESL). We found that simulation results are very good agreement with experimental data from Secondary ion mass spectroscopy (SIMS) and Transmission Electron Microscope (TEM)/ Energy-dispersive X-ray spectroscopy (EDS) and the detailed atom and bond analysis are obtained to study the surface reaction during the plasma process

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