PROCEEDINGS VOLUME 0861
1987 SYMPOSIUM ON THE TECHNOLOGIES FOR OPTOELECTRONICS | 17-20 NOVEMBER 1987
Quantum Wells and Superlattices in Optoelectronic Devices and Integrated Optics
IN THIS VOLUME

0 Sessions, 20 Papers, 0 Presentations
All Papers  (20)
1987 SYMPOSIUM ON THE TECHNOLOGIES FOR OPTOELECTRONICS
17-20 November 1987
Cannes, France
All Papers
Proc. SPIE 0861, Multiple Quantum Well (MQW) Devices For Monolithic Integrated Optoelectronics, 0000 (16 May 1988); doi: 10.1117/12.943400
Proc. SPIE 0861, Modulation Of Absorption By An Electric Field In Type II GaAs/AlAs Superlattices, 0000 (16 May 1988); doi: 10.1117/12.943401
Proc. SPIE 0861, Electric-Field-Induced Refractive Index Change In Gainasp/Inp Mqw Structures, 0000 (16 May 1988); doi: 10.1117/12.943402
Proc. SPIE 0861, Optoelectronic Device Applications Of Doping Superlattices, 0000 (16 May 1988); doi: 10.1117/12.943403
Proc. SPIE 0861, Optical Devices Using III-V Quantum Wells And Multilayers, 0000 (16 May 1988); doi: 10.1117/12.943404
Proc. SPIE 0861, Reappraisal Of GaAs-AlGaAs Quantum Well Lasers, 0000 (16 May 1988); doi: 10.1117/12.943405
Proc. SPIE 0861, Gaalas MBE Quantum Well Laser With Low Threshold Current Modelling And Experiment, 0000 (16 May 1988); doi: 10.1117/12.943406
Proc. SPIE 0861, Temperature Dependence Of Threshold Current Of Double Quantum Well, Separately Confined Heterostructure (AlGa)As/GaAs Lasers Grown By MOCVD, 0000 (16 May 1988); doi: 10.1117/12.943407
Proc. SPIE 0861, Ultrawide Band Light Emitters By Means Of Quantum Confined Field Effects, 0000 (16 May 1988); doi: 10.1117/12.943408
Proc. SPIE 0861, All-Binary Short Period GaAs-AlAs Superlattice Quantum Well Lasers Grown By Molecular Beam Epitaxy, 0000 (16 May 1988); doi: 10.1117/12.943409
Proc. SPIE 0861, Electroluminescence From A Short Asymmetric GaAs/AlAs Superlattice, 0000 (16 May 1988); doi: 10.1117/12.943410
Proc. SPIE 0861, Note On The Optical Oscillator Strength Of Microscopic Superlattices As Optically Active Parts Of Devices, 0000 (16 May 1988); doi: 10.1117/12.943411
Proc. SPIE 0861, Surface Plasmon Enhanced Intersubband Resonance In AlGaAs QWs, 0000 (16 May 1988); doi: 10.1117/12.943412
Proc. SPIE 0861, Heterostructures Of Lattice Mismatched Semiconductors: Fundamental Aspects And Device Perspectives, 0000 (16 May 1988); doi: 10.1117/12.943413
Proc. SPIE 0861, Low Threshold Current InP-Based Strained-Layer 1.55µm Lasers, 0000 (16 May 1988); doi: 10.1117/12.943414
Proc. SPIE 0861, The Engineering Of Optical Absorption Coefficients In Strained Multiquantum Well Systems, 0000 (16 May 1988); doi: 10.1117/12.943415
Proc. SPIE 0861, Influence Of Interrupted Growth On The Luminescence Properties Of Quantum Wells, 0000 (16 May 1988); doi: 10.1117/12.943416
Proc. SPIE 0861, Planar Integration Of Linear And Nonlinear III-V MOW Optical Comppnents, 0000 (16 May 1988); doi: 10.1117/12.943418
Proc. SPIE 0861, High-Speed Multiquantum Well Avalanche Photodiodes, 0000 (16 May 1988); doi: 10.1117/12.943419
Proc. SPIE 0861, Low Pressure MOCVD Of Uniform InP/GaInAs And GaInAsP Superlattice Structures And Quantum Wells For Optoelectronic Applications, 0000 (16 May 1988); doi: 10.1117/12.943420
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