PROCEEDINGS VOLUME 1678
SEMICONDUCTORS '92 | 22-22 MARCH 1992
Spectroscopic Characterization Techniques for Semiconductor Technology IV
SEMICONDUCTORS '92
22-22 March 1992
Somerset, NJ, United States
Structural Spectroscopies
Proc. SPIE 1678, High-resolution x-ray diffraction analysis of thin III-V layers and quantum wires (Invited Paper), 0000 (1 July 1992); doi: 10.1117/12.60437
Proc. SPIE 1678, Spectrally resolved luminescence of InP at low temperatures using minority carrier injection from a scanning tunneling microscope tip, 0000 (1 July 1992); doi: 10.1117/12.60438
Proc. SPIE 1678, In-situ electron spectroscopy studies of interaction between P and GaAs(100) surface, 0000 (1 July 1992); doi: 10.1117/12.60439
Proc. SPIE 1678, Properties and structures of Fe-based metallic thin films in amorphous and crystalline forms (Poster Paper), 0000 (1 July 1992); doi: 10.1117/12.60440
Photoluminescence Spectroscopy
Proc. SPIE 1678, Optical studies of interface roughness in GaAs/AlAs quantum-well structures (Invited Paper), 0000 (1 July 1992); doi: 10.1117/12.60441
Proc. SPIE 1678, Implementation of a polarization modulation technique in a photoluminescence and photoluminescence excitation measurement setup, 0000 (1 July 1992); doi: 10.1117/12.60442
Proc. SPIE 1678, Photoluminescence from pseudomorphically strained Si/Si1-xGex multiple quantum wells grown on silicon, 0000 (1 July 1992); doi: 10.1117/12.60443
Proc. SPIE 1678, Optical studies of lattice-matched and strained GaInAs/AlInAs single quantum wells, 0000 (1 July 1992); doi: 10.1117/12.60444
Proc. SPIE 1678, Luminescence properties of Al0.48In0.52As under hydrostatic pressure, 0000 (1 July 1992); doi: 10.1117/12.60445
Raman Scattering Spectroscopy
Proc. SPIE 1678, Raman spectroscopy of delta-doped GaAs layers and wires (Invited Paper), 0000 (1 July 1992); doi: 10.1117/12.60446
Proc. SPIE 1678, Systematic optical study of InxGa1-xAs on InP using photoluminescence, photoreflectance, and micro-Raman spectroscopy, 0000 (1 July 1992); doi: 10.1117/12.60447
Proc. SPIE 1678, Raman scattering in InxGa1-x As/GaAs superlattices grown by molecular-beam epitaxy, 0000 (1 July 1992); doi: 10.1117/12.60448
Proc. SPIE 1678, Raman scattering characterization of processing effects on GaAs planar photoconductors, 0000 (1 July 1992); doi: 10.1117/12.60449
Proc. SPIE 1678, Raman spectroscopy study of interdiffusion in Si/SiGe superlattices, 0000 (1 July 1992); doi: 10.1117/12.60450
Proc. SPIE 1678, Raman and photoluminescence characterization of AlGaAs multiple-quantum-well structures formed by focused-ion-beam implantation, 0000 (1 July 1992); doi: 10.1117/12.60451
Optical and Modulated Optical Spectroscopy
Proc. SPIE 1678, Electromodulation of semiconductors and semiconductor microstructures utilizing a new contactless technique, 0000 (1 July 1992); doi: 10.1117/12.60452
Proc. SPIE 1678, Temperature dependence of the 11H photoreflectance lineshape in an (001) In0.21Ga0.79As/GaAs single quantum well, 0000 (1 July 1992); doi: 10.1117/12.60453
Proc. SPIE 1678, Photoreflectance characteristics of AlGaAs/GaAs structures, 0000 (1 July 1992); doi: 10.1117/12.60454
Raman Scattering Spectroscopy
Proc. SPIE 1678, Application of differential photoreflectance spectroscopy in selective modulation of a layer within multilayer device structures, 0000 (1 July 1992); doi: 10.1117/12.60455
Optical and Modulated Optical Spectroscopy
Proc. SPIE 1678, Correlation between electric field, temperature, and carrier concentration with respect to photoreflectance lineshape at the E1 transition of GaAs, 0000 (1 July 1992); doi: 10.1117/12.60456
Proc. SPIE 1678, Direct measurement of the piezoelectric field and Fermi level pinning in [111]B grown InGaAs/GaAs heterostructures, 0000 (1 July 1992); doi: 10.1117/12.60457
Proc. SPIE 1678, Effect of annealing on Fermi level pinning of low-temperature molecular-beam epitaxial GaAs, 0000 (1 July 1992); doi: 10.1117/12.60458
Ellipsometry and Reflectance Difference Spectroscopy
Proc. SPIE 1678, In-situ and ex-situ ellipsometric characterization for semiconductor technology (Invited Paper), 0000 (1 July 1992); doi: 10.1117/12.60459
Proc. SPIE 1678, In-situ characterization of thin film semiconductors by spectroellipsometry from ultraviolet to infrared, 0000 (1 July 1992); doi: 10.1117/12.60460
Proc. SPIE 1678, Reflectance difference for in-situ characterization of surfaces and epitaxial growth of GaAs on (001) GaAs, 0000 (1 July 1992); doi: 10.1117/12.60461
Proc. SPIE 1678, Differential reflectance spectroscopy of GaAs, 0000 (1 July 1992); doi: 10.1117/12.60462
Proc. SPIE 1678, Dielectric functions and critical point transitions of single strained and relaxed InxGa1-xAs/GaAs epilayers studied by spectroscopic ellipsometry and photoreflectance, 0000 (1 July 1992); doi: 10.1117/12.60463
Free-Electron Laser Spectroscopy
Proc. SPIE 1678, Picosecond spectroscopy in solids with a free-electron laser (Invited Paper), 0000 (1 July 1992); doi: 10.1117/12.60464
Photoluminescence Spectroscopy
Proc. SPIE 1678, Magneto-optical studies of highly excited quantum wells (Invited Paper), 0000 (1 July 1992); doi: 10.1117/12.60465
Free-Electron Laser Spectroscopy
Proc. SPIE 1678, Saturation spectroscopy of carriers in semiconductor multiple-quantum-well structures, 0000 (1 July 1992); doi: 10.1117/12.60466
Ellipsometry and Reflectance Difference Spectroscopy
Proc. SPIE 1678, New technique for obtaining the electroreflectance spectrum: vacuum electroreflectance (Poster Paper), 0000 (1 July 1992); doi: 10.1117/12.60467
Optical and Modulated Optical Spectroscopy
Proc. SPIE 1678, Microwave-modulated photoluminescence: technique and application to III-Vs (Poster Paper), 0000 (1 July 1992); doi: 10.1117/12.60468
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