Application of intra-field alignment to reduce wafer-to-wafer variation

Jangsun Kim; Seonho Lee; Hyunjun Ha; Boris Habets; Enrico Bellmann; Holger Bald; Tobias Hoeer; Seop Kim

doi:10.1117/12.2552735

23 March 2020 Application of intra-field alignment to reduce wafer-to-wafer variation

Jangsun Kim, Seonho Lee, Hyunjun Ha, Boris Habets, Enrico Bellmann, Holger Bald, Tobias Hoeer, Seop Kim

Proceedings Volume 11327, Optical Microlithography XXXIII; 113270V (2020) https://doi.org/10.1117/12.2552735
Event: SPIE Advanced Lithography, 2020, San Jose, California, United States

Abstract

In most leading-edge technologies, first layers usually are more critical than later layers. For some technologies, however, most critical layers are in mid-of line. On such technologies, less advanced equipment is used for first layers. Because such tools are not so stable, the overlay variation must be compensated on advanced tools used for later layers. Wafer-to-wafer variation is typically corrected by wafer alignment. By standard wafer alignment, intra-field variations are usually not corrected. Because of the instability of the older tools, additional marks to compensate intra-field variation were measured on advanced tools. This reduces the wafer-to-wafer variation but causes throughput loss. Therefore, sampling plans were optimized to reduce the number of intra-field marks by 50%. This was verified by run-to-run simulations and experiments.

Citation Download Citation

Jangsun Kim, Seonho Lee, Hyunjun Ha, Boris Habets, Enrico Bellmann, Holger Bald, Tobias Hoeer, and Seop Kim "Application of intra-field alignment to reduce wafer-to-wafer variation", Proc. SPIE 11327, Optical Microlithography XXXIII, 113270V (23 March 2020); https://doi.org/10.1117/12.2552735

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