EUV mask defect material characterization through actinic lensless imaging

Tao Shen; Dimitrios Kazazis; Hyun-Su Kim; Atoosa Dejkameh; Ricarda Nebling; Yasin Ekinci; Iacopo Mochi

doi:10.1117/12.2613337

26 May 2022 EUV mask defect material characterization through actinic lensless imaging

Tao Shen, Dimitrios Kazazis, Hyun-Su Kim, Atoosa Dejkameh, Ricarda Nebling, Yasin Ekinci, Iacopo Mochi

Proceedings Volume 12053, Metrology, Inspection, and Process Control XXXVI; 120530H (2022) https://doi.org/10.1117/12.2613337
Event: SPIE Advanced Lithography + Patterning, 2022, San Jose, California, United States

Abstract

The reflective-mode EUV mask scanning lensless imaging microscope (RESCAN) is a synchrotron-based platform dedicated to EUV mask inspection and review at the Swiss Light Source. It is based on coherent diffraction imaging (CDI), which allows retrieving both the phase and the amplitude information of the mask surface. RESCAN has been successfully tested on masks with programmed phase and amplitude defects. A metrology method that can not only detect defects and contamination, but can also determine the material of the defects, can be a powerful tool to help identify the root cause of the defects. Here, we explore the possibility of leveraging the ability of RESCAN to detect the complex amplitude of the sample to distinguish surface defects of different materials. We fabricated a sample with random logic-like absorber patterns and pillar defects on top of a Mo/Si multilayer. We show our experimental results that show the defects of different materials exhibit specific contrast and phase values. This method can be used not only to detect the masks defects but also to identify the defect materials to a limited extent.

Citation Download Citation

Tao Shen, Dimitrios Kazazis, Hyun-Su Kim, Atoosa Dejkameh, Ricarda Nebling, Yasin Ekinci, and Iacopo Mochi "EUV mask defect material characterization through actinic lensless imaging", Proc. SPIE 12053, Metrology, Inspection, and Process Control XXXVI, 120530H (26 May 2022); https://doi.org/10.1117/12.2613337

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KEYWORDS

Photomasks

Extreme ultraviolet

Absorption

Inspection

Coherence imaging

Defect detection

Extreme ultraviolet lithography

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